182 Result(s)
within
English
Electronics and Microelectronics, Instrumentation
Engineering, general
Strongly Correlated Systems, Superconductivity
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Chapter
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Chapter
Material Technology for Vortex Electronics
High-T_c superconductor (HTSC) thin films are typically grown by mean of pulsed laser deposition (PLD), metalorganic chemical vapor deposition (MOCVD), sputtering or molecular beam epitaxy (MBE). This cha...
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Chapter
Vortices in High-T_c
In this chapter we describe the behavior of vortices in high-T_c superconductors. Because of two-dimensional-like and spatially anisotropic electronic structures, the vortices in these materials exhibit chara...
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Chapter
New Aspect of Vortex in HTSC
Some topics related to a new aspect of the vortices observed in high-T_c superconductors (HTSCs) are reviewed in this chapter. One of the most important physical properties of vortices created in type-II supe...
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Chapter
Applications of HTSC SQUIDs
Recently a high temperature superconductor (HTSC)-SQUID has been made with high magnetic field resolution and its application is expected to be practical for many fields. The HTSC-SQUID can work using...
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Chapter
Introduction
In the history of modern physics and engineering, the electron quantum mechanical effect and its utilization in electronics have attracted much attention. With increase in demand for ultrahigh sensiti...
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Chapter
Observation of Vortices
Various kinds of special techniques have been developed to visualize quantized magnetic flux in superconductors, i.e. vortex. This chapter reviews the experimental techniques and discusses the vortex distribu...
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Chapter
High-T_c SQUIDs
This chapter reviews the development of magnetometers based on high-T_c superconducting quantum interference devices (HTSC-SQUID) operated in liquid nitrogen. A HTSC-SQUID is usually made of a grain-boundary J...
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Chapter
Introduction
In this chapter we will outline the theory of semiconductor laser devices, and summarize the associated fabrication technology and their importance in opto-electronics. A brief history of semiconductor lasers ...
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Basic Design of Semiconductor Lasers
A double heterostructure is a very basic, necessary design for semiconductor lasers capable of confining both electronic carriers and lightwaves in its cavity. The introduction of double heterostructures into ...
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Liquid Phase Epitaxy and Growth Technology
Liquid-Phase Epitaxy (LPE) has many advantages and is capable of producing reliable semiconductor devices. This chapter provides a detailed description of the equipment necessary for LPE and the epitaxial tech...
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Characterization of Laser Materials
The preceeding chapters have described crystal growth for semiconductor lasers, with an emphasis on liquid-phase epitaxial growth techniques. Now we turn our attention to the evaluation of grown wafers and dev...
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Chapter
Mode-Control Techniques in Semiconductor Lasers
It is very important for semiconductor lasers to have stable transverse and longitudinal modes in order to obtain reliable performance. This is achieved by using an index waveguide structure. One of the most c...
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Chapter
Materials for Semiconductor Lasers
Compound semiconductors, especially III-V compound semiconductors, are well suited for semiconductor lasers. The most basic, necessary condition required of laser materials is, of course, that the input energy...
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Chapter
Epitaxy of III–V Compound Semiconductors
This chapter summarizes the fundamental concepts of the epitaxial growth of III–V compound semiconductors. The relevant crystal-growth technologies encompass two categories: bulk crystal preparation for a subs...
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Chapter
Vapor Phase and Beam Epitaxies
The Liquid-Phase Epitaxy (LPE) growth technique is based on simple principles and resrs upon simple apparatuses. It is described in Chap. 5. Recently, superlattice devices composed of finer heterostructures ha...
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Chapter
Semiconductor-Laser Devices — Fabrication and Characteristics
In this chapter, we examine the fabrication of actual laser devices and the relevant characterization techniques. The design criteria stated in Chap. 3 should be checked as the first step of device evaluation....
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Chapter
Surface-Emitting Lasers
The surface-emitting laser began to be considered one of the crucial devices for the next generation of optoelectronics when advantage was taken of its high degree of parallelism. In this chapter, we review th...
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Chapter and Conference Paper
Is the 13C Nuclear Spin-Lattice Relaxation in A3C60 (A = Rb, K) Unconventional?
I want to point out that the simple Korringa relation does not hold for A3C60 ,i.e. density of states information cannot be obtained from T 1 data. A modified Korringa relation must be applied ins...
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Chapter and Conference Paper
NMR Studies of Fullerene C60-Based Compounds
We present NMR studies performed on AnC60 compounds, where A can be K, Rb, I2, O2 and n can be 1, 2, 3 and 6 depending on the system. Using high resolution NMR we have obtained information on the molecular dynami...
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Chapter and Conference Paper
Anharmonic Effects in the Apex O Phonon in Relation to the Background Continuum in High-Tc Cuprates
The observed temperature dependence of the apex O phonon self-energy has been found to be described well by a static aharmonicity in the apex O vibrational potential in YBa2Cu3O6.9, TIBa2CaCu2O7 and T12Ba2CaCu2O8
