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  1. No Access

    Chapter

    The Effect of Thermal Treatment of Crystals on Their Structure Quality and Mechanical Characteristics

    The modern technological processes of manufacturing single-crystal articles usually include thermal treatment of the already-made products or their blanks as one of the necessary stages. Thermal treatment pres...

    Elena R. Dobrovinskaya, Leonid A. Lytvynov, Valerian Pishchik in Sapphire (2009)

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    Chapter

    Properties of Sapphire

  3. Mirror-turn axis of the sixth order (ternary inversion axis)

  4. Three axes of the second order normal to it

    ...
  5. Elena R. Dobrovinskaya, Leonid A. Lytvynov, Valerian Pishchik in Sapphire (2009)

  6. No Access

    Chapter

    Crystal Growth Methods

    Sapphire can be grown from the gaseous, liquid, and solid phases. An ample literature devoted to the methods of obtaining sapphire from different media contains data on the theory and practice of growing the c...

    Elena R. Dobrovinskaya, Leonid A. Lytvynov, Valerian Pishchik in Sapphire (2009)

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    Chapter

    Influence of Chemical–Mechanical Treatment on the Quality of Sapphire Article Working Surfaces and on the Evolution of Surfaces under the Action of Forces

    Development of a technology for reproducible crystal treatment is a complicated problem. On the one hand, even crystals grown by the same method under identical conditions may differ in quality and properties,...

    Elena R. Dobrovinskaya, Leonid A. Lytvynov, Valerian Pishchik in Sapphire (2009)

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    Chapter

    Methods for Obtaining Complex Monolithic Sapphire Units and Large-Size Crystals

    The present-day state of crystal growth technologies makes it possible to obtain sapphire products of rather large size and complex configuration. However, demand has arisen for super-large sapphire crystals a...

    Elena R. Dobrovinskaya, Leonid A. Lytvynov, Valerian Pishchik in Sapphire (2009)

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    Chapter

    Application of Sapphire

    As far back as the tenth century BC , sapphires and rubies were valued as gems on the level of diamonds. Artificial sapphires were first used in jewelry art as well, but from the beginning of the twentieth cen...

    Elena R. Dobrovinskaya, Leonid A. Lytvynov, Valerian Pishchik in Sapphire (2009)

  10. No Access

    Chapter

    Radiation Effects in Sapphire

    High-energy particles that participate in elastic and inelastic interactions with target nuclei cause shifts of the crystal lattice atoms. At low energies of bombarding particles, such shifts lead to the forma...

    Elena R. Dobrovinskaya, Leonid A. Lytvynov, Valerian Pishchik in Sapphire (2009)

  11. No Access

    Chapter

    The Regularities of Structure Defect Formation at the Crystal Growing

    This chapter will present the main mechanisms of the structure defect formation in sapphire and will look at the possibilities of growing the crystals with a prespecified distribution of the structure defects

    Elena R. Dobrovinskaya, Leonid A. Lytvynov, Valerian Pishchik in Sapphire (2009)

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    Chapter

    VCSELs Emitting in the 2–3 µm Wavelength Range

    In this chapter, we tried to give a precise picture of the current state of the art of VCSEL technology in the 2–3 µm spectral range. We described classical microcavities but also structures with external-cavi...

    F. Genty, A. Garnache, L. Cerutti in Mid-infrared Semiconductor Optoelectronics (2006)

  13. No Access

    Chapter

    Interface Lasers with Asymmetric Band Offset Confinement

    K. D. Moiseev, Y. P. Yakovlev in Mid-infrared Semiconductor Optoelectronics (2006)

  14. No Access

    Chapter

    Mid-infrared Vertical Cavity Surface Emitting Lasers based on the Lead Salt Compounds

    In conclusion, lead salt vertical-cavity surface-emitting lasers offer attractive properties as coherent infrared laser sources. In particular, they feature single mode operation, emit circularly shaped parall...

    G. Springholz, T. Schwarzl, W. Heiss in Mid-infrared Semiconductor Optoelectronics (2006)

  15. No Access

    Chapter

    Advanced Conventional Interconnects: State of the Art, Future Trends, and Limitations

    M. Moussavi in Optical Interconnects (2006)

  16. No Access

    Chapter

    Mid-infrared Quantum Cascade Lasers

    As a result of continual evolution of active region design, quantum cascade lasers have achieved unprecedented levels of performance for solid state sources in the 5-12µm region. QCLs also offer unique possibi...

    J. Cockburn in Mid-infrared Semiconductor Optoelectronics (2006)

  17. No Access

    Chapter

    Silicon Raman Laser, Amplifier, and Wavelength Converter

    O. Boyraz in Optical Interconnects (2006)

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    Chapter

    LED-Photodiode Opto-pairs

    We have demonstrated that InAs-based narrow gap heterostructures exhibit a potential barrier at the p-n junction up to 300°C and are able to operate in positive and negative luminescence modes in the 3–5 µm sp...

    Boris A. Matveev in Mid-infrared Semiconductor Optoelectronics (2006)

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    Chapter

    Silicon Photodetectors and Receivers

    Horst Zimmermann in Optical Interconnects (2006)

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    Chapter

    Negative Luminescence

    Negative luminescent devices have progressed immensely in the 40 years since the first observation of the effect in semiconductors. Most of the progress during the first 30 years was achieved through the use o...

    T. Ashley, G. R. Nash in Mid-infrared Semiconductor Optoelectronics (2006)

  21. No Access

    Chapter

    An Introduction to Silicon Photonics

    G. T. Reed in Optical Interconnects (2006)

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    Chapter

    Quantum Photovoltaic Devices Based on Antimony Compound Semiconductors

    In summary, we have successfully developed the empirical tight-binding modeling for the design of Type II InAs/GaSb superlattices. We have demonstrated very high quality superlattice material growths using sta...

    Y. Wei, A. Gin, M. Razeghi in Mid-infrared Semiconductor Optoelectronics (2006)

  23. No Access

    Chapter

    Development of Infrared Countermeasure Technology and Systems

    D. H. Titterton in Mid-infrared Semiconductor Optoelectronics (2006)

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