286 Result(s)
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Chapter
The Effect of Thermal Treatment of Crystals on Their Structure Quality and Mechanical Characteristics
The modern technological processes of manufacturing single-crystal articles usually include thermal treatment of the already-made products or their blanks as one of the necessary stages. Thermal treatment pres...
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Chapter
Properties of Sapphire
Mirror-turn axis of the sixth order (ternary inversion axis)
Three axes of the second order normal to it
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Chapter
Crystal Growth Methods
Sapphire can be grown from the gaseous, liquid, and solid phases. An ample literature devoted to the methods of obtaining sapphire from different media contains data on the theory and practice of growing the c...
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Influence of Chemical–Mechanical Treatment on the Quality of Sapphire Article Working Surfaces and on the Evolution of Surfaces under the Action of Forces
Development of a technology for reproducible crystal treatment is a complicated problem. On the one hand, even crystals grown by the same method under identical conditions may differ in quality and properties,...
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Methods for Obtaining Complex Monolithic Sapphire Units and Large-Size Crystals
The present-day state of crystal growth technologies makes it possible to obtain sapphire products of rather large size and complex configuration. However, demand has arisen for super-large sapphire crystals a...
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Application of Sapphire
As far back as the tenth century BC , sapphires and rubies were valued as gems on the level of diamonds. Artificial sapphires were first used in jewelry art as well, but from the beginning of the twentieth cen...
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Radiation Effects in Sapphire
High-energy particles that participate in elastic and inelastic interactions with target nuclei cause shifts of the crystal lattice atoms. At low energies of bombarding particles, such shifts lead to the forma...
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The Regularities of Structure Defect Formation at the Crystal Growing
This chapter will present the main mechanisms of the structure defect formation in sapphire and will look at the possibilities of growing the crystals with a prespecified distribution of the structure defects
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VCSELs Emitting in the 2–3 µm Wavelength Range
In this chapter, we tried to give a precise picture of the current state of the art of VCSEL technology in the 2–3 µm spectral range. We described classical microcavities but also structures with external-cavi...
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Interface Lasers with Asymmetric Band Offset Confinement
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Chapter
Mid-infrared Vertical Cavity Surface Emitting Lasers based on the Lead Salt Compounds
In conclusion, lead salt vertical-cavity surface-emitting lasers offer attractive properties as coherent infrared laser sources. In particular, they feature single mode operation, emit circularly shaped parall...
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Advanced Conventional Interconnects: State of the Art, Future Trends, and Limitations
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Mid-infrared Quantum Cascade Lasers
As a result of continual evolution of active region design, quantum cascade lasers have achieved unprecedented levels of performance for solid state sources in the 5-12µm region. QCLs also offer unique possibi...
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Chapter
Silicon Raman Laser, Amplifier, and Wavelength Converter
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Chapter
LED-Photodiode Opto-pairs
We have demonstrated that InAs-based narrow gap heterostructures exhibit a potential barrier at the p-n junction up to 300°C and are able to operate in positive and negative luminescence modes in the 3–5 µm sp...
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Silicon Photodetectors and Receivers
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Negative Luminescence
Negative luminescent devices have progressed immensely in the 40 years since the first observation of the effect in semiconductors. Most of the progress during the first 30 years was achieved through the use o...
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Chapter
An Introduction to Silicon Photonics
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Chapter
Quantum Photovoltaic Devices Based on Antimony Compound Semiconductors
In summary, we have successfully developed the empirical tight-binding modeling for the design of Type II InAs/GaSb superlattices. We have demonstrated very high quality superlattice material growths using sta...
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Chapter
Development of Infrared Countermeasure Technology and Systems