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  1. No Access

    Chapter

    The Effect of Thermal Treatment of Crystals on Their Structure Quality and Mechanical Characteristics

    The modern technological processes of manufacturing single-crystal articles usually include thermal treatment of the already-made products or their blanks as one of the necessary stages. Thermal treatment pres...

    Elena R. Dobrovinskaya, Leonid A. Lytvynov, Valerian Pishchik in Sapphire (2009)

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    Chapter

    Properties of Sapphire

  3. Mirror-turn axis of the sixth order (ternary inversion axis)

  4. Three axes of the second order normal to it

    ...
  5. Elena R. Dobrovinskaya, Leonid A. Lytvynov, Valerian Pishchik in Sapphire (2009)

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    Chapter

    Crystal Growth Methods

    Sapphire can be grown from the gaseous, liquid, and solid phases. An ample literature devoted to the methods of obtaining sapphire from different media contains data on the theory and practice of growing the c...

    Elena R. Dobrovinskaya, Leonid A. Lytvynov, Valerian Pishchik in Sapphire (2009)

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    Chapter

    Influence of Chemical–Mechanical Treatment on the Quality of Sapphire Article Working Surfaces and on the Evolution of Surfaces under the Action of Forces

    Development of a technology for reproducible crystal treatment is a complicated problem. On the one hand, even crystals grown by the same method under identical conditions may differ in quality and properties,...

    Elena R. Dobrovinskaya, Leonid A. Lytvynov, Valerian Pishchik in Sapphire (2009)

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    Chapter

    Methods for Obtaining Complex Monolithic Sapphire Units and Large-Size Crystals

    The present-day state of crystal growth technologies makes it possible to obtain sapphire products of rather large size and complex configuration. However, demand has arisen for super-large sapphire crystals a...

    Elena R. Dobrovinskaya, Leonid A. Lytvynov, Valerian Pishchik in Sapphire (2009)

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    Chapter

    Application of Sapphire

    As far back as the tenth century BC , sapphires and rubies were valued as gems on the level of diamonds. Artificial sapphires were first used in jewelry art as well, but from the beginning of the twentieth cen...

    Elena R. Dobrovinskaya, Leonid A. Lytvynov, Valerian Pishchik in Sapphire (2009)

  10. No Access

    Chapter

    Radiation Effects in Sapphire

    High-energy particles that participate in elastic and inelastic interactions with target nuclei cause shifts of the crystal lattice atoms. At low energies of bombarding particles, such shifts lead to the forma...

    Elena R. Dobrovinskaya, Leonid A. Lytvynov, Valerian Pishchik in Sapphire (2009)

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    Chapter

    The Regularities of Structure Defect Formation at the Crystal Growing

    This chapter will present the main mechanisms of the structure defect formation in sapphire and will look at the possibilities of growing the crystals with a prespecified distribution of the structure defects

    Elena R. Dobrovinskaya, Leonid A. Lytvynov, Valerian Pishchik in Sapphire (2009)

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    Chapter

    Introduction

    The text before you addresses the physics and technology of laser diodes with a focus on their use in optical microsystems. Before beginning the technical discussion, it may be of edifying value to consider th...

    Professor Dr. Hans Zappe in Laser Diode Microsystems (2004)

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    Chapter

    Semiconductors for Lasers

    The fact that semiconductor laser diodes are made from semiconductors is in large part responsible for their success. Semiconductor materials exist in great variety, resulting in a large range of accessible la...

    Professor Dr. Hans Zappe in Laser Diode Microsystems (2004)

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    Chapter

    Flows in Porous Media

    We now turn our attention to the results that constitute the core of modern research on convective heat and mass transfer through porous media. Our objective is not only to organize the compact presentation of...

    Adrian Bejan, Ibrahim Dincer, Sylvie Lorente in Porous and Complex Flow Structures in Mode… (2004)

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    Chapter

    Laser Diode Characterization

    When an engineer decides to use a semiconductor laser diode as a light source in an optical microsystem, one of her first tasks will be to determine its operating characteristics. Despite availability of data ...

    Professor Dr. Hans Zappe in Laser Diode Microsystems (2004)

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    Chapter

    Environmental and Civil Engineering

    Realistic models of energy systems demand the treatment of installations and their flowing surroundings together, more so when the installations are large and their spheres of impact greater. The interface bet...

    Adrian Bejan, Ibrahim Dincer, Sylvie Lorente in Porous and Complex Flow Structures in Mode… (2004)

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    Chapter

    Integration and Assembly

    Our goal in studying semiconductor lasers in this textbook has been to use them as light sources in optical microsystems. Key to achieving this is the availability of techniques for integrating laser diodes wi...

    Professor Dr. Hans Zappe in Laser Diode Microsystems (2004)

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    Chapter

    Living Structures

    The development of complex cellular systems such as the vertebrates requires the availability of large amounts of oxygen for the metabolic needs of the cells. The respiratory and circulatory systems are the sp...

    Adrian Bejan, Ibrahim Dincer, Sylvie Lorente in Porous and Complex Flow Structures in Mode… (2004)

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    Chapter

    Extrinsic Interface Dipoles

    The deliberate manipulation of barrier heights at metal—semiconductor contacts by do** of the interface with foreign atoms has turned out to be a difficult task. Predeposited atoms were found to form compoun...

    Professor em. Dr. Winfried Mönch in Electronic Properties of Semiconductor Interfaces (2004)

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    Chapter

    Multidisciplinary Applications

    The void spaces of a porous structure can be interconnected or not. In the latter case the void spaces are disconnected “inclusions” that do not allow a flow to permeate through the porous structure. When the ...

    Adrian Bejan, Ibrahim Dincer, Sylvie Lorente in Porous and Complex Flow Structures in Mode… (2004)

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    Chapter

    Introduction

    Semiconductor science began in 1874. At the end of this year, Ferdinand Braun described his discovery of the rectifying properties of metal—semiconductor contacts in an article entitled Über die Stromleitung durc...

    Professor em. Dr. Winfried Mönch in Electronic Properties of Semiconductor Interfaces (2004)

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    Chapter

    Determination of Barrier Heights and offsets

    As in the bulk of semiconductors the current flow through space-charge regions of metal semiconductor contacts occurs via drift and diffusion. The semiconductors will be assumed to be doped non-degenerately n-typ...

    Professor em. Dr. Winfried Mönch in Electronic Properties of Semiconductor Interfaces (2004)

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    Chapter

    The IFIGS-and-Electronegativity Theory

    Studies of core-level photoemission revealed the partial ionic character of the covalent bonds between metal and substrate atoms on semiconductor surfaces covered with metal adatoms.

    Professor em. Dr. Winfried Mönch in Electronic Properties of Semiconductor Interfaces (2004)

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