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  1. No Access

    Chapter and Conference Paper

    STRUCTURAL EVOLUTION AND POINT DEFECTS IN METAL OXIDE-BASED HIGH-κ GATE DIELECTRICS

    Processing of ultra-thin high-κ metal oxide films (e.g. HfO2) for use in semiconductor devices requires exposure of these materials to potentiallyreactive solids and to both reducing and oxidizing ambients at ele...

    PAUL C. MCINTYRE, HYOUNGSUB KIM… in Defects in High-k Gate Dielectric Stacks (2006)

  2. No Access

    Chapter and Conference Paper

    INTERDIFFUSION STUDIES OF HIGH-K GATE DIELECTRIC STACK CONSTITUENTS

    stability of various high-κ gate dielectric materials. The role of film morphology and the resultant interdiffusion are also discussed. This paper presents a summary of recent studies of the thermal

    P. SIVASUBRAMIANI, M.A. QUEVEDO-LOPEZ, T.H. LEE… in Defects in High-k Gate Dielectric Stacks (2006)

  3. No Access

    Chapter and Conference Paper

    TRANSIENT CHARGING EFFECTS AND ITS IMPLICATIONS TO THE RELIABILITY OF HIGH-K DIELECTRICS

    Unlike SiO2-based devices, various structural defects and small band gaps in high-κ gate dielectrics make high-κ devices susceptible to electron charging. In particular, fast transient charging in high-κ devices ...

    BYOUNG HUN LEE, RINO CHOI, RUSTY HARRIS… in Defects in High-k Gate Dielectric Stacks (2006)

  4. No Access

    Chapter and Conference Paper

    DEFECT-RELATED ISSUES IN HIGH-K DIELECTRICS

    The roles of impurities and point defects are again coming to the forefront as new materials, such as high-k dielectrics, and novel device structures (e.g., double gate MOSFETs) are introduced in new generatio...

    SOKRATES T. PANTELIDES, M.H. EVANS… in Defects in High-k Gate Dielectric Stacks (2006)

  5. No Access

    Chapter and Conference Paper

    PROBING POINT DEFECTS AND TRAPS IN STACKS OF ULTRATHIN HAFNIUM OXIDES ON (100)SI BY ELECTRON SPIN RESONANCE: INTERFACES AND N INCORPORATION

    results of an electron spin resonance (ESR) analysis of (100)Si/HfO2 entities with ultrathin layers of deposited amorphous (a)-HfO2 are overviewed. The main ESR signals observed in the as-grown samples and after ...

    A. STESMANS, V.V. AFANAS’EV in Defects in High-k Gate Dielectric Stacks (2006)

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    Chapter and Conference Paper

    DEFECTS AT THE HIGH-κ /SEMICONDUCTOR INTERFACES INVESTIGATED BY SPIN DEPENDENT SPECTROSCOPIES

    The interfaces between high-κ dielectrics, grown by atomic layer deposition, and semiconductors have been characterized using various electrically detected magnetic resonance spectroscopy techniques. The domin...

    MARCO FANCIULLI, OMAR COSTA, SILVIA BALDOVINO… in Defects in High-k Gate Dielectric Stacks (2006)

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    Chapter and Conference Paper

    ELECTRICALLY ACTIVE INTERFACE AND BULK SEMICONDUCTOR DEFECTS IN HIGH-K / GERMANIUM STRUCTURES

    Metal insulator semiconductor field effect transistors (MOSFETs) with high-k dielectric gates fabricated on high mobility semiconductors such as germanium could be used for future high performance logic device...

    A. DIMOULAS in Defects in High-k Gate Dielectric Stacks (2006)

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    Chapter and Conference Paper

    ELECTRICAL DEFECTS IN ATOMIC LAYER DEPOSITED HFO2 FILMS ON SILICON: INFLUENCE OF PRECURSOR CHEMISTRIES AND SUBSTRATE TREATMENT

    Capacitance-voltage, deep level transient spectroscopy, and conductance transient measurement results on atomic layer deposited (ALD) Al/HfO2/Si structures are presented here. These methods assist in establishing...

    SALVADOR DUEÑAS, HELENA CASTÁN, HÉCTOR GARCÍA… in Defects in High-k Gate Dielectric Stacks (2006)

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    Chapter and Conference Paper

    CAN LEIS SPECTRA CONTAIN INFORMATION ON SURFACE ELECTRONIC STRUCTURE OF HIGH-K DIELECTRICS?

    While investigating the surface composition of thin layers containing Hf with low energy ion spectroscopy (LEIS) utilizing He+ ions with energy E0=300÷800 eV, the fine structure of Hf line was observed. Hf spectr...

    Y. LEBEDINSKII, A. ZENKEVICH, M. PUSHKIN… in Defects in High-k Gate Dielectric Stacks (2006)

  10. No Access

    Chapter and Conference Paper

    MONITORING OF FERMI LEVEL VARIATIONS AT METAL/HIGH-K INTERFACES WITH IN SITU X-RAY PHOTOELECTRON SPECTROSCOPY

    A method to monitor Fermi level changes at the metal/high-k interface depending on the materials of choice and peculiarities of interface formation is presented. The method is based on the deposition of ultrat...

    Y. LEBEDINSKII, A. ZENKEVICH, E.P. GUSEV in Defects in High-k Gate Dielectric Stacks (2006)

  11. No Access

    Chapter and Conference Paper

    DIELECTRIC AND INFRARED PROPERTIES OF ULTRATHIN SiO2 LAYERS ON Si(100)

    The occurrence of an ultrathin SiO2 oxide layer at the interface between silicon and high-k dielectrics in metal-oxide-semiconductor devices contributes to degrading the capacitance of the gate stack. In this wor...

    F. GIUSTINO, A. PASQUARELLO in Defects in High-k Gate Dielectric Stacks (2006)

  12. No Access

    Chapter and Conference Paper

    EXTREMELY HIGH-DENSITY CAPACITORS WITH ALD HIGH-K DIELECTRIC LAYERS

    This paper describes the deposition of high-k dielectric layers, Al2O3, Ta2O5, HfO2, etc, in high aspect ratio pores aiming for a higher capacitance density at a given breakdown voltage. The most emerging technol...

    JOHAN KLOOTWIJK, ANTON KEMMEREN, ROB WOLTERS… in Defects in High-k Gate Dielectric Stacks (2006)

  13. No Access

    Chapter and Conference Paper

    INTERFACE FORMATION DURING EPITAXIAL GROWTH OF BINARY METAL OXIDES ON SILICON

    The Si/dielectric interface properties influence the device performance significantly. Often the interface is not stable and changes during and after the growth. For a better understanding of the interface and...

    H. J. OSTEN, A. FISSEL, O. KIRFEL, Z. ELASSAR… in Defects in High-k Gate Dielectric Stacks (2006)

  14. No Access

    Chapter and Conference Paper

    CORRELATION BETWEEN DEFECTS, LEAKAGE CURRENTS AND CONDUCTION MECHANISMS IN THIN HIGH-K DIELECTRIC LAYERS

    Results on leakage currents and conduction mechanisms in various high-k dielectric layers (Zr-, Hf-, HfTi-silicates and Ta2O5) are presented. It is demonstrated that small alteration of the dielectric composition...

    A. PASKALEVA, E. ATANASSOVA, M. LEMBERGER… in Defects in High-k Gate Dielectric Stacks (2006)

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    Chapter and Conference Paper

    ON THE CHARACTERIZATION OF ELECTRONICALLY ACTIVE DEFECTS IN HIGH-к GATE DIELECTRICS

    A number of techniques are discussed with regard the measurement of electronically active defects in high-к gate dielectrics. Following a short review of 1st-order trap** kinetics, a discussion of its limita...

    D.A. BUCHANAN, D. FELNHOFER in Defects in High-k Gate Dielectric Stacks (2006)

  16. No Access

    Chapter and Conference Paper

    HIGH-K GATE STACKS ELECTRICAL CHARACTERIZATION AT THE NANOSCALE USING CONDUCTIVE-AFM

    A purposely developed Conductive Atomic Force Microscope with enhanced electrical performance (ECAFM) has been used for the electrical characterization of HfO2/SiO2 gate stacks. The conduction of the fresh (wi...

    MONTSERRAT NAFRIA, XAVIER BLASCO, MARC PORTI… in Defects in High-k Gate Dielectric Stacks (2006)

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    Chapter and Conference Paper

    CHARACTERIZATION AND MODELING OF DEFECTS IN HIGH-K MEASUREMENTS LAYERS THROUGH FAST ELECTRICAL TRANSIENT

    An original dynamic analysis technique allows the characterization of VT shift transients for full time range. Extensive data set versus voltage, time, temperature and operating mode is shown to fit with direct t...

    JEROME MITARD, CHARLES LEROUX, GILLES REIMBOLD… in Defects in High-k Gate Dielectric Stacks (2006)

  18. No Access

    Chapter and Conference Paper

    ON THE IMPORTANCE OF ATOMIC PACKING IN DETERMINING DIELECTRIC PERMITTIVITIES

    The role of the network structure in determining the dielectric constant of binary and ternary oxide insulators is outlined. Seemingly anomalous behavior observed in rare-earth sesquioxides, Ta2O5-TiO2 mixed oxid...

    A.H. EDWARDS, T. BUSANI, R.A.B. DEVINE… in Defects in High-k Gate Dielectric Stacks (2006)

  19. No Access

    Chapter and Conference Paper

    IMPACT OF HIGH-κ PROPERTIES ON MOSFET ELECTRICAL CHARACTERISTICS

    The integration of high-κ dielectrics in MOSFET devices is beset by many problems. In this paper a review on the impact of defects in high-κ materials on the MOSFET electrical characteristics is presented. Bes...

    LUIGI PANTISANO, L-Å. RAGNARSSON, M. HOUSSA… in Defects in High-k Gate Dielectric Stacks (2006)

  20. No Access

    Chapter and Conference Paper

    DISORDERED STRUCTURE AND DENSITY OF GAP STATES IN HIGH-PERMITTIVITY THIN SOLID FILMS

    Metal-oxide-semiconductor structures based on high-permittivity dielectric thin films of HfO2, ZrO2, Al2O3, TiO2, Ta2O5, and Nb2O5, were subjected to capacitance-voltage and conductance transient measurements as ...

    KAUPO KUKLI, SALVADOR DUEÑAS, HELENA CASTÁN… in Defects in High-k Gate Dielectric Stacks (2006)

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