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    Flash Memory Featuring Low-Voltage Operation by Crystalline ZrTiO4 Charge-Trap** Layer

    Crystalline ZrTiO4 (ZTO) in orthorhombic phase with different plasma treatments was explored as the charge-trap** layer for low-voltage operation flash memory. For ZTO without any plasma treatment, even with a ...

    Yung-Shao Shen, Kuen-Yi Chen, Po-Chun Chen, Teng-Chuan Chen… in Scientific Reports (2017)

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