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Article
Chemical Vapor Deposition of Ti-Si-N Films with Alternating Source Supply
Titanium-silicon-nitride films were grown by atomic layer deposition using an alternating supply of tetrakis(dimethylamido)titanium (TDMAT), silane. and ammonia, at substrate temperature of 180°C. The supply o...
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Article
Atomic Layer Deposition of Ta2O5 Films Using Ta(OC2H5)5 and Nh3
Tantalum oxide films were grown by chemical vapor deposition using an alternating supply of tantalum pentaethoxide and ammonia. The supply of one source was followed by a purge with argon gas before introducin...
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Article
Single Source CVD of LiAlO2
We successfully deposited LiAlO2 films on Si substrates at 400-600 °C by single source chemical vapor deposition using a heterometallic compound, Li(OiPr)2Al(CH3)2, which contains Li, Al, and O at the same 1:1:2 ...