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Open AccessTwo-dimensional materials for future information technology: status and prospects
Over the past 70 years, the semiconductor industry has undergone transformative changes, largely driven by the miniaturization of devices and the integration of innovative structures and materials. Two-dimensi...
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Open AccessObservation of dichotomic field-tunable electronic structure in twisted monolayer-bilayer graphene
Twisted bilayer graphene (tBLG) provides a fascinating platform for engineering flat bands and inducing correlated phenomena. By designing the stacking architecture of graphene layers, twisted multilayer graph...
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Author Correction: Enhanced low-temperature proton conductivity in hydrogen-intercalated brownmillerite oxide
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Open AccessIonic liquid gating induced self-intercalation of transition metal chalcogenides
Ionic liquids provide versatile pathways for controlling the structures and properties of quantum materials. Previous studies have reported electrostatic gating of nanometer-thick flakes leading to emergent su...
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Open AccessIn vitro and in vivo low-dose exposure of simulated cooking oil fumes to assess adverse biological effects
Cooking oil fumes (COFs) represent a major indoor environmental pollutant and exhibit potent mutagenic or carcinogenic health effects caused by containing various heterocyclic aromatic amines (HAAs) and long-c...
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Open AccessUltrafast photothermoelectric effect in Dirac semimetallic Cd3As2 revealed by terahertz emission
The thermoelectric effects of topological semimetals have attracted tremendous research interest because many topological semimetals are excellent thermoelectric materials and thermoelectricity serves as one o...
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Open AccessSpatially-resolved electronic structure of stripe domains in IrTe2 through electronic structure microscopy
Phase separation in the nanometer- to micrometer-scale is characteristic for correlated materials, for example, high temperature superconductors, colossal magnetoresistance manganites, Mott insulators, etc. Re...
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Open AccessRobust charge-density wave strengthened by electron correlations in monolayer 1T-TaSe2 and 1T-NbSe2
Combination of low-dimensionality and electron correlation is vital for exotic quantum phenomena such as the Mott-insulating phase and high-temperature superconductivity. Transition-metal dichalcogenide (TMD) ...
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Open AccessExperimental evidence of plasmarons and effective fine structure constant in electron-doped graphene/h-BN heterostructure
Electron-electron interaction is fundamental in condensed matter physics and can lead to composite quasiparticles called plasmarons, which strongly renormalize the dispersion and carry information of electron-...
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Open AccessUltra-narrow-bandwidth graphene quantum dots for superresolved spectral and spatial sensing
Narrow-bandwidth luminescent materials are already used in optoelectronic devices, superresolution, lasers, imaging, and sensing. The new-generation carbon fluorescence nanomaterials—carbon dots—have attracted...
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Open AccessAutoencoder based blind source separation for photoacoustic resolution enhancement
Photoacoustics is a promising technique for in-depth imaging of biological tissues. However, the lateral resolution of photoacoustic imaging is limited by size of the optical excitation spot, and therefore by ...
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Open AccessInterlayer quantum transport in Dirac semimetal BaGa2
The quantum limit is quite easy to achieve once the band crossing exists exactly at the Fermi level (EF) in topological semimetals. In multilayered Dirac fermion systems, the density of Dirac fermions on the zero...
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Open AccessConversion of Multi-layered MoTe2 Transistor Between P-Type and N-Type and Their Use in Inverter
Both p-type and n-type MoTe2 transistors are needed to fabricate complementary electronic and optoelectronic devices. In this study, we fabricate air-stable p-type multi-layered MoTe2 transistors using Au as elec...
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Open AccessPronounced Photovoltaic Response from Multi-layered MoTe2 Phototransistor with Asymmetric Contact Form
In this study, we fabricate air-stable p-type multi-layered MoTe2 phototransistor using Au as electrodes, which shows pronounced photovoltaic response in off-state with asymmetric contact form. By analyzing the s...
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Open AccessLorentz-violating type-II Dirac fermions in transition metal dichalcogenide PtTe2
Topological semimetals have recently attracted extensive research interests as host materials to condensed matter physics counterparts of Dirac and Weyl fermions originally proposed in high energy physics. Alt...
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Open AccessDirect observation of spin-layer locking by local Rashba effect in monolayer semiconducting PtSe2 film
The generally accepted view that spin polarization in non-magnetic solids is induced by the asymmetry of the global crystal space group has limited the search for spintronics materials mainly to non-centrosymm...
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Open AccessRaman signatures of inversion symmetry breaking and structural phase transition in type-II Weyl semimetal MoTe2
Transition metal dichalcogenide MoTe2 is an important candidate for realizing the newly predicted type-II Weyl fermions, for which the breaking of the inversion symmetry is a prerequisite. Here we present direct ...
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Experimental observation of topological Fermi arcs in type-II Weyl semimetal MoTe2
Observations of topological surface states provide strong evidence that MoTe2 is a type-II Weyl semimetal, hosting Weyl fermions that have no counterpart in high-energy physics.
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Gaps induced by inversion symmetry breaking and second-generation Dirac cones in graphene/hexagonal boron nitride
Images of the second-generation Dirac cones that form when graphene is placed on hexagonal boron nitride show the potential of using superlattices to engineer the electronic band structure of van der Waals het...
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Fully gapped topological surface states in Bi2Se3 films induced by a d-wave high-temperature superconductor
By growing a topological insulator on top of a high-temperature superconducting substrate it is possible to induce superconductivity in the surface states of the topological insulator. Moreover, the pairing sy...