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  1. No Access

    Article

    A Novel Two-Pass Excimer Laser Crystallization Process to Obtain Homogeneous Large Grain Polysilicon

    New approach to control the lateral growth mechanism through the opportune spatial modulation of the absorbed laser energy and with a two-pass excimer laser crystallization process is presented. In the first p...

    L. Mariucci, R. Carluccio, A. Pecora, V. Foglietti… in MRS Online Proceedings Library (1999)

  2. No Access

    Article

    A New Method for the Derivation of the Output Characteristics of Amorphous Silicon Thin-Film Transistors.

    A novel method to derive the output characteristics of a-Si:H thin film transistors from the channel conductance curve is presented. The Method well reproduces the experimental data both in the linear and satu...

    A. Mittiga, L. Mariucci, R. Carluccio, A. Pecorai… in MRS Online Proceedings Library (1994)

  3. No Access

    Article

    Determination of the Defect Redistribution and Charge Injection Contributions to the a-Si:H Thin-Film Transistor Instability

    The effects of bias-stressing n- and p-channel thin-film transistors, employing thermal silicon dioxide as gate insulator, have been analysed by using different techniques, including field-effect, space-charge...

    R. Carluccio, A. Pecora, D. Massimiani, G. Fortunato in MRS Online Proceedings Library (1994)

  4. No Access

    Article

    High Substrate Temperature (420 °C) Excimer Laser Crystallization of Hydrogenated Amorphous Silicon

    Excimer laser crystallization of hydrogenated amorphous silicon has been investigated as a function of substrate temperature. At low substrate temperatures hydrogen out-diffusion strongly influences the film m...

    R. Carluccio, A. Pecora, G. Fortunato, J. Stoemenos… in MRS Online Proceedings Library (1992)