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  1. No Access

    Article

    Secondary Grain Growth in Heavily Doped Polysilicon During Rapid Thermal Annealing

    To successfully implement Silicon-on-Insulator (SOI) technology using polysilicon-on-oxide, it is necessary to maximize the grain size such that the active devices are entirely within very large single crystal...

    S. Batra, K. Park, M. Lobo, S. Banerjee in MRS Online Proceedings Library (1992)

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    Article

    Control of Polysilicon Emitter Bipolar Transistor Characteristics by Rapid Thermal or Furnace Anneal of the Polysilicon/Silicon Interface

    In this paper we report on the ability of rapid thermal annealing (1050C, 45s) and furnace annealing (900C, 30min) to partially break up the interfacial oxide in bipolar transistors with different oxide thickn...

    S. Bhattacharya, M. Lobo, L. Jung, S. Banerjee, R. Reuss… in MRS Online Proceedings Library (1992)