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  1. No Access

    Article

    Calculation of deposition conditions for Si3N4 from a SiL4-NH3 gas phase (L=H, Cl, Br, CH)

    Deposition conditions yielding silicon nitride are calculated for a set of initial gaseous systems, by complex thermodynamic equilibria computations. The influence of temperature, total pressure and reactant g...

    J. F. Lartigue, M. Ducarroir, B. Armas in Journal of Materials Science (1984)

  2. No Access

    Article

    Thermodynamic and experimental study of CVD of non-stoichiometric titanium nitride from TiCl4N2-H2 mixtures

    Using the polynomial description of the Gibbs free energy of formation of titanium nitride against its composition, thermodynamic deposition diagrams were determined at 1900 K. The description of the whole ran...

    F. Teyssandier, C. Bernard, M. Ducarroir in Journal of Materials Science (1988)