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123 Result(s)
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Article
Degenerate four-wave mixing based on excited-state absorption in azo-dye-doped polymer films
Degenerate Four-Wave Mixing (DFWM) based on excited-state absorption in azo-dye doped polymer films is firstly reported. Under a pre-exciting argon laser at 514.5 nm, DFWM is performed using a 632.8 nm HeNe la...
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Article
Iron-doped semi-insulating InP grown by chloride VPE with nitrogen mixed with hydrogen as carrier gas
Iron-doped semi-insulating InP has been grown by chloride vapour-phase epitaxy (VPE) using nitrogen mixed with hydrogen as carrier. Reducing hydrogen partial pressure by the introduction of nitrogen greatly im...
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Article
Electro-optic measurement of poled polymer-based asymmetric Fabry–Perot cavity
An easy way to determine linear electro-optic effect of poled polymer materials was demonstrated by polymer-based asymmetric Fabry–Perot multiple reflection cavity. The standing-free technique of the cavity an...
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Article
Band structures and characteristics of InGaAs/InGaAsP strain-compensated quantum well lasers
Analysis is performed for valence band structures and some characteristics of InGaAs/InGaAsP strain-compensated quantum well lasers lattice-matched to InP substrate. The computed results show that band offsets...
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Article
A study on Raman scattering cross section of carbon tetrachloride at low concentrations
Using the technique of the liquid-core optical fiber (LCOF), we measured the Raman spectra intensities of CCl4 in CS2 at concentrations ranging from 90 to 0.8% in volume. According to the relative peak area ratio...
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Article
Ultraviolet electroluminescence from p-GaN/i-ZnO/n-ZnO heterojunction light-emitting diodes
In this work, we report on the fabrication and characteristics of light-emitting diodes based on p-GaN/i-ZnO/n-ZnO heterojunction. A 30 nm i-ZnO layer was grown on p-GaN by rf reactive magnetron sputtering, th...
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Article
Observation of upconversion fluorescence and stimulated emission based on three-photon absorption
The observations of three-photon-induced frequency-upconversion fluorescence and the highly directional stimulated visible emission in two dyes, 4-[p-(dicyanoethylamino) styryl]-N-methylpyridinium iodide (abbrevi...
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Article
5.3 W deep-blue light generation by intra-cavity frequency doubling of Nd:GdVO4
We report the efficient compacted deep-blue laser at 456 nm generation by intra-cavity frequency doubling of a continuous-wave (cw) laser operation of a diode-pumped Nd:GdVO4 laser on the 4 ...
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Article
Photoelectric properties of ZnO: In nanorods/SiO2/Si heterostructure assembled in aqueous solution
In-doped zinc oxide (ZnO:In) nanorods were grown onto SiO2/n-Si substrate without catalyst in aqueous solution. The ZnO:In nanorods/SiO2/n-Si heterostructure photovoltaic device was prepared. The structural and p...
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Article
Simultaneous Q switching and mode locking with narrow envelope width in a microchip Nd:YVO4 laser with a composite semiconductor absorber
By using a composite semiconductor absorber and an output coupler, we demonstrated a Q-switched and mode-locked diode-pumped microchip Nd:YVO4 laser. With a 350-μm-thick crystal, the width of the Q-switched envel...
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Article
Efficient electrooptically Q-switched Er:Cr:YSGG laser oscillator-amplifier system with a Glan-Taylor prism polarizer
A relatively simple efficient electrooptically Q-switched Er:Cr:YSGG laser oscillator-amplifier system in a line has been demonstrated. A Glan-Taylor prism and a cubic LiNbO3 crystal are used as the polarizer and...
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Article
5.3 W deep-blue light generation by intra-cavity frequency doubling of Nd:GdVO4
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Article
High average power and short pulse duration continuous wave mode-locked Nd:GdVO4 laser with a semiconductor absorber mirror
Passive mode locking of a solid-state Nd:GdVO4 laser is demonstrated. The laser is mode locked by use of a semiconductor absorber mirror (SAM). A low Nd3+ doped Nd:GdVO4 crystal is used to mitigate the thermal le...
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Article
Efficient generation of a CW 593.5-nm laser by intracavity sum-frequency mixing with a BiB3O6 (BIBO) crystal
A compact, efficient yellow-orange light at 593.5 nm was realized by the intracavity sum-frequency mixing using a BIBO crystal in a diode-pumped Nd:YVO4 laser. At an incident pump power of 3.5 W, up to 126 mW of ...
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Article
Low threshold and high contrast polymer dispersed liquid crystal grating based on twisted nematic polarization modulator
An electrically tunable mode is proposed to overcome the bottleneck problem of a conventional polymer dispersed liquid crystal (PDLC) grating and realize its low threshold and high contrast through an alignmen...
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Article
A new approach to white light emitting diodes of p-GaN/i-ZnO/n-ZnO heterojunctions
A simple method to fabricate one-chip white light emitting diodes (LEDs) is proposed. A series of p-GaN/i-ZnO/n-ZnO heterojunctions fabricated by pulsed laser deposition exhibit simultaneous Mg-related p-GaN (...
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Article
2.0 μm room temperature CW operation of InGaAsSb/AlGaAsSb laser with asymmetric waveguide structure
The GaInAsSb/AlGaAsSb double quantum well lasers with an emission wavelength 2.0 μm, using the separate-confinement asymmetric waveguide, have been designed and fabricated, showing high quantum efficiency and ...
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Article
Highly efficient intracavity frequency-doubled Nd:GdVO4-LBO red laser at 670 nm under direct 880 nm pum**
We report the efficient compact red laser at 670 nm generation by intracavity frequency doubling of a continuous wave laser operation of a diode direct pumped Nd:GdVO4 laser on the 4 F ...
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Article
All solid-state continuous-wave Nd:YAG laser at 1319 and 659.5 nm under direct 885 nm pum**
The continuous-wave high efficiency laser emission of Nd:YAG at the fundamental wavelength of 1319 nm and its 659.5-nm second harmonic obtained by intracavity frequency doubling with an LBO nonlinear crystal i...
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Article
High-efficiency direct-pumped Nd:YLF laser operating at 1321 nm
We present a high-efficiency Nd: LiYF4 (Nd:YLF) laser operating at 1321 nm pumped directly into the emitting level, 4F3/2. The linear polarization of the pump diode laser was maintained by a short fiber. At the a...