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  1. No Access

    Article

    Degenerate four-wave mixing based on excited-state absorption in azo-dye-doped polymer films

    Degenerate Four-Wave Mixing (DFWM) based on excited-state absorption in azo-dye doped polymer films is firstly reported. Under a pre-exciting argon laser at 514.5 nm, DFWM is performed using a 632.8 nm HeNe la...

    H. Fei, Y. Yang, Z. Wei, L. Han, Y. Che, P. Wu, G. Sun in Applied Physics B (1996)

  2. No Access

    Article

    Iron-doped semi-insulating InP grown by chloride VPE with nitrogen mixed with hydrogen as carrier gas

    Iron-doped semi-insulating InP has been grown by chloride vapour-phase epitaxy (VPE) using nitrogen mixed with hydrogen as carrier. Reducing hydrogen partial pressure by the introduction of nitrogen greatly im...

    H. B. Sun, Y. D. Li, S. Y. Chen, L. Z. Hu, Y. X. Zhang in Optical and Quantum Electronics (1996)

  3. No Access

    Article

    Electro-optic measurement of poled polymer-based asymmetric Fabry–Perot cavity

    An easy way to determine linear electro-optic effect of poled polymer materials was demonstrated by polymer-based asymmetric Fabry–Perot multiple reflection cavity. The standing-free technique of the cavity an...

    D.M. Zhang, M.B. Yi, K.X. Chen, X.J. Tian, W. Sun in Optical and Quantum Electronics (2000)

  4. No Access

    Article

    Band structures and characteristics of InGaAs/InGaAsP strain-compensated quantum well lasers

    Analysis is performed for valence band structures and some characteristics of InGaAs/InGaAsP strain-compensated quantum well lasers lattice-matched to InP substrate. The computed results show that band offsets...

    C.S. Ma, L.J. Wang, S.Y. Liu in Optical and Quantum Electronics (2001)

  5. No Access

    Article

    A study on Raman scattering cross section of carbon tetrachloride at low concentrations

    Using the technique of the liquid-core optical fiber (LCOF), we measured the Raman spectra intensities of CCl4 in CS2 at concentrations ranging from 90 to 0.8% in volume. According to the relative peak area ratio...

    J.-H. Yin, Z.-W. Li, Y.-J. Tian, Z.-W. Sun, X.-L. Song in Applied Physics B (2005)

  6. No Access

    Article

    Ultraviolet electroluminescence from p-GaN/i-ZnO/n-ZnO heterojunction light-emitting diodes

    In this work, we report on the fabrication and characteristics of light-emitting diodes based on p-GaN/i-ZnO/n-ZnO heterojunction. A 30 nm i-ZnO layer was grown on p-GaN by rf reactive magnetron sputtering, th...

    H. Y. Xu, Y. C. Liu, Y. X. Liu, C. S. Xu, C. L. Shao, R. Mu in Applied Physics B (2005)

  7. No Access

    Article

    Observation of upconversion fluorescence and stimulated emission based on three-photon absorption

    The observations of three-photon-induced frequency-upconversion fluorescence and the highly directional stimulated visible emission in two dyes, 4-[p-(dicyanoethylamino) styryl]-N-methylpyridinium iodide (abbrevi...

    Q. Yang, S. Lin, L. Xu, F. Yang, Y. Yang, L. Pan, C. Sun, Y. Li in Applied Physics B (2005)

  8. No Access

    Article

    5.3 W deep-blue light generation by intra-cavity frequency doubling of Nd:GdVO4

    We report the efficient compacted deep-blue laser at 456 nm generation by intra-cavity frequency doubling of a continuous-wave (cw) laser operation of a diode-pumped Nd:GdVO4 laser on the 4 ...

    F. Jia, Q. Xue, Q. Zheng, Y. Bu, L. Qian in Applied Physics B (2006)

  9. No Access

    Article

    Photoelectric properties of ZnO: In nanorods/SiO2/Si heterostructure assembled in aqueous solution

    In-doped zinc oxide (ZnO:In) nanorods were grown onto SiO2/n-Si substrate without catalyst in aqueous solution. The ZnO:In nanorods/SiO2/n-Si heterostructure photovoltaic device was prepared. The structural and p...

    Y.W. Chen, Y.C. Liu, S.X. Lu, C.S. Xu, C.L. Shao in Applied Physics B (2006)

  10. No Access

    Article

    Simultaneous Q switching and mode locking with narrow envelope width in a microchip Nd:YVO4 laser with a composite semiconductor absorber

    By using a composite semiconductor absorber and an output coupler, we demonstrated a Q-switched and mode-locked diode-pumped microchip Nd:YVO4 laser. With a 350-μm-thick crystal, the width of the Q-switched envel...

    J. Y. Peng, H. M. Tan, Y. G. Wang, B. S. Wang, J. G. Miao, L. S. Qian in Laser Physics (2006)

  11. No Access

    Article

    Efficient electrooptically Q-switched Er:Cr:YSGG laser oscillator-amplifier system with a Glan-Taylor prism polarizer

    A relatively simple efficient electrooptically Q-switched Er:Cr:YSGG laser oscillator-amplifier system in a line has been demonstrated. A Glan-Taylor prism and a cubic LiNbO3 crystal are used as the polarizer and...

    T. -J. Wang, Q. -Y. He, J. -Y. Gao, Y. Jiang, Z. -H. Kang, H. Sun in Laser Physics (2006)

  12. Article

    5.3 W deep-blue light generation by intra-cavity frequency doubling of Nd:GdVO4

    F. Jia, Q. Xue, Q. Zheng, Y. Bu, L. Qian in Applied Physics B (2007)

  13. No Access

    Article

    High average power and short pulse duration continuous wave mode-locked Nd:GdVO4 laser with a semiconductor absorber mirror

    Passive mode locking of a solid-state Nd:GdVO4 laser is demonstrated. The laser is mode locked by use of a semiconductor absorber mirror (SAM). A low Nd3+ doped Nd:GdVO4 crystal is used to mitigate the thermal le...

    J. Y. Peng, B. S. Wang, Y. G. Wang, J. G. Miao, E. J. Hao, H. M. Tan in Laser Physics (2007)

  14. No Access

    Article

    Efficient generation of a CW 593.5-nm laser by intracavity sum-frequency mixing with a BiB3O6 (BIBO) crystal

    A compact, efficient yellow-orange light at 593.5 nm was realized by the intracavity sum-frequency mixing using a BIBO crystal in a diode-pumped Nd:YVO4 laser. At an incident pump power of 3.5 W, up to 126 mW of ...

    X. H. Fu, H. H. Tan, Y. M. Li, E. J. Hao, G. Shen, L. S. Qian in Laser Physics (2007)

  15. No Access

    Article

    Low threshold and high contrast polymer dispersed liquid crystal grating based on twisted nematic polarization modulator

    An electrically tunable mode is proposed to overcome the bottleneck problem of a conventional polymer dispersed liquid crystal (PDLC) grating and realize its low threshold and high contrast through an alignmen...

    Z. Zheng, F. Guo, Y. Liu, L. Xuan in Applied Physics B (2008)

  16. No Access

    Article

    A new approach to white light emitting diodes of p-GaN/i-ZnO/n-ZnO heterojunctions

    A simple method to fabricate one-chip white light emitting diodes (LEDs) is proposed. A series of p-GaN/i-ZnO/n-ZnO heterojunctions fabricated by pulsed laser deposition exhibit simultaneous Mg-related p-GaN (...

    L. Zhao, C.S. Xu, Y.X. Liu, C.L. Shao, X.H. Li, Y.C. Liu in Applied Physics B (2008)

  17. No Access

    Article

    2.0 μm room temperature CW operation of InGaAsSb/AlGaAsSb laser with asymmetric waveguide structure

    The GaInAsSb/AlGaAsSb double quantum well lasers with an emission wavelength 2.0 μm, using the separate-confinement asymmetric waveguide, have been designed and fabricated, showing high quantum efficiency and ...

    Z. G. Li, G. J. Liu, M. H. You, L. Li, M. Li, Y. Wang, B. S. Zhang in Laser Physics (2009)

  18. No Access

    Article

    Highly efficient intracavity frequency-doubled Nd:GdVO4-LBO red laser at 670 nm under direct 880 nm pum**

    We report the efficient compact red laser at 670 nm generation by intracavity frequency doubling of a continuous wave laser operation of a diode direct pumped Nd:GdVO4 laser on the 4 F ...

    Y. F. Lü, X. H. Zhang, J. **a, X. D. Yin, A. F. Zhang, L. Bao, D. Wang in Laser Physics (2009)

  19. No Access

    Article

    All solid-state continuous-wave Nd:YAG laser at 1319 and 659.5 nm under direct 885 nm pum**

    The continuous-wave high efficiency laser emission of Nd:YAG at the fundamental wavelength of 1319 nm and its 659.5-nm second harmonic obtained by intracavity frequency doubling with an LBO nonlinear crystal i...

    Y. F. Lü, X. H. Zhang, J. **a, X. D. Yin, L. Bao, H. Quan in Laser Physics (2010)

  20. No Access

    Article

    High-efficiency direct-pumped Nd:YLF laser operating at 1321 nm

    We present a high-efficiency Nd: LiYF4 (Nd:YLF) laser operating at 1321 nm pumped directly into the emitting level, 4F3/2. The linear polarization of the pump diode laser was maintained by a short fiber. At the a...

    Y. F. Lü, J. **a, X. H. Zhang, A. F. Zhang, J. G. Wang, L. Bao in Applied Physics B (2010)

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