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    Open Access

    Field-effect transistors based on cubic indium nitride

    Although the demand for high-speed telecommunications has increased in recent years, the performance of transistors fabricated with traditional semiconductors such as silicon, gallium arsenide and gallium nitr...

    Masaaki Oseki, Kana Okubo, Atsushi Kobayashi, Jitsuo Ohta… in Scientific Reports (2014)

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