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  1. No Access

    Article

    Selective Growth of GaAs and A1xGa1-xas by Omvpe Using Tertiarybutylarsine

    We have investigated the use of tertiarybutylarsine (TBAs) to selectively grow GaAs and AlxGa1-x As in trenches on partially-masked GaAs substrates. Both SiyNz and Si02 masks have been used, with geometries rangi...

    K. L. Tokuda, D. W. Kisker, M. Lamont-Schnoes, J. Lopata in MRS Online Proceedings Library (1990)

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    Article

    Low Temperature OMVPE of ZnSe from Alkyl Sources Using a Plasma Disk Lamp

    The growth of high quality ZnSe by organometallic vapor phase epitaxy (OMVPE) has generally been hindered because of parasitic source pre-reactions or relatively high source decomposition temperatures. In this...

    K. L. Tokuda, B. Pihlstrom, D. W. Kisker… in MRS Online Proceedings Library (1988)

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    Article

    Preparation and Properties of Hydrogenated Amorphous Silicon Produced by Plasma-Enhanced Chemical Vapor Decomposition of Silane

    We have investigated the properties of several hydrogenated amorphous silicon (a-Si:H) films prepared by the plasma-enhanced chemical vapor decomposition (PECVD) of silane. This reactor is singular because it ...

    K. L. Tokuda, D. Adler, R. Reif in MRS Online Proceedings Library (1987)