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    Microstructure of highly p-type doped GaN sub-contact layers for low-resistivity contacts

    The effect of a highly Mg doped subcontact layer on top of GaN grown by metal organic vapor phase epitaxy and its interface to a Pd/Au contact layer was investigated by means of transmission electron microscop...

    R. Kröger, J. Dennemarck, T. Böttcher, S. Figge… in MRS Online Proceedings Library (2004)