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    Article

    Growth and interfacial properties of atomic layer deposited Al0.7Ti0.3O y high-k dielectric on Ge substrate

    Growth and interfacial properties of atomic layer deposited Al0.7Ti0.3O y on Ge have been investigated as a potential high-k gate dielectric for future Ge-based metal oxide semi...

    Hong-Liang Lu, Zhang-Yi **e, Yang Geng, Yuan Zhang, Qing-Qing Sun… in Applied Physics A (2014)

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    Article

    Effect of ozone treatment on the optical and electrical properties of HfSiO thin films

    The effect of room temperature ozone oxidation treatment on thin HfSiO film grown by atomic layer deposition (ALD) has been investigated. The optical and electrical properties with different post-ozone oxidati...

    Yang Geng, Wen Yang, Shang-Bin Zhu, Yuan Zhang, Qing-Qing Sun… in Applied Physics A (2014)