SpringerLink
Log in

Single-electron trap** at semiconductor interfaces

  • Chapter
  • First Online:
Advances in Solid State Physics 35

Part of the book series: Advances in Solid State Physics ((ASSP,volume 35))

Abstract

In sub-μm metal-oxide-semiconductor field-effect transistors (MOS-FETs) the trap** and emission of single inversion carriers at the Si−SiO2 interface can be observed and is in fact the major contribution to the total noise present in the device during operation. It is visible as a discrete fluctuation of the channel conductance known as a random telegraph signal (RTS). Capture and emission in such small structures are subject to considerable Coulomb blocking effects of several hundred meV at room temperature. Single interface traps may be used as atomic probes in the MOS channel.

This is a preview of subscription content, log in via an institution to check access.

Access this chapter

Log in via an institution

Institutional subscriptions

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. Ralls, K. S., W. J. Skocpol, L. D. Jackel, R. E. Howard, L. A. Fetter, R. W. Epworth and D. M. Tennant, Phys. Rev. Lett. 52 (1984) 228.

    Article  ADS  Google Scholar 

  2. Kirton, M. J., and M. J. Uren, Advances in Physics 38, No. 4 (1989) 367.

    Article  ADS  Google Scholar 

  3. Kirton, M. J., M. J. Uren, S. Collins, M. Schulz, A. Karmann and K. Scheffer, Semicond. Sci. Technol. 4 (1989) 1116.

    Article  ADS  Google Scholar 

  4. Farmer, K. R., Discrete conductance fluctuations and related phenomena in Metal-Oxide-Silicon device structures, in: “Insulating Films on Semiconductors, INFOS 91”, eds. W. Eccleston and M. J. Uren, Adam Hilger, Bristol (1991) 1.

    Google Scholar 

  5. Cobden, D. H., and M. J. Uren, in: “Proceedings of the International Conference on Insulating Films on Semiconductors INFOS 93”, Delft, The Netherlands, P. Balk ed., Elsevier Science Publishers, Amsterdam (1993) 163.

    Google Scholar 

  6. Mueller, H. H., and M. Schulz, Journal of Materials Science: Materials in Electronics 5 (1994) 329.

    Article  Google Scholar 

  7. Schulz, M., J. Appl. Phys., 74(4) (1993) 2649; cf. also in “Proceedings of the International Conference on Insulating Films on Semiconductors INFOS 93”, Delft, The Netherlands, P. Balk ed., Elsevier Science Publishers, Amsterdam (1993) 171.

    Article  ADS  Google Scholar 

  8. Mueller, H. H., D. Wörle and M. Schulz, J. Appl. Phys. 75(6) (1994) 2970.

    Article  ADS  Google Scholar 

  9. Fulton, T. A., and G. J. Dolan, Phys. Rev. Lett. 59 (1987) 109.

    Article  ADS  Google Scholar 

  10. Van Bentum, P. J. M., H. van Kampen, L. E. C. Van de Leemput, and P. A. A. Teunissen, Phys. Rev. Lett. 60 (1988) 369.

    Article  ADS  Google Scholar 

  11. Pothier, H., P. Lafarge, C. Urbina, D. Esteve, and M. Devoret, Europhys. Lett. 17 (1992) 249.

    Article  ADS  Google Scholar 

  12. Schulz, M., and A. Karmann, Appl. Phys. A 52 (1991) 104; cf. also “Proceedings of the International Conference on Insulating Films on Semiconductors INFOS 91”, eds. W. Eccleston and M. J. Uren, Adam Hilger, Bristol (1991) 143.

    Article  ADS  Google Scholar 

  13. Schulz, M., A. Pappas and J. Vennemann, in “The Physics and Chemistry of SiO2 and its Interfaces to Silicon”, C. R. Helms and B. E. Deal eds., Plenum Press, New York (1993) 383.

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Institute of Applied Physics, University of Erlangen-Nürnberg, Staudtstr. 7, 91058, Erlangen

    M. Schulz & H. H. Mueller

Authors
  1. M. Schulz
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. H. H. Mueller
    View author publications

    You can also search for this author in PubMed Google Scholar

Editor information

Reinhard Helbig

Rights and permissions

Reprints and permissions

Copyright information

© 1996 Friedr. Vieweg & Sohn Verlagsgesellschaft mbH

About this chapter

Cite this chapter

Schulz, M., Mueller, H.H. (1996). Single-electron trap** at semiconductor interfaces. In: Helbig, R. (eds) Advances in Solid State Physics 35. Advances in Solid State Physics, vol 35. Springer, Berlin, Heidelberg. https://doi.org/10.1007/BFb0107548

Download citation

  • DOI: https://doi.org/10.1007/BFb0107548

  • Published:

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-528-08043-3

  • Online ISBN: 978-3-540-75334-6

  • eBook Packages: Springer Book Archive

Publish with us

Policies and ethics

Search

Navigation