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Native defects and impurities in GaN

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Advances in Solid State Physics 35

Part of the book series: Advances in Solid State Physics ((ASSP,volume 35))

Abstract

Applying state-of-the-art first-principles, calculations we study atomic geometry, electronic structure, and energetics for all native defects and for several donor impurities (O, C, Si) and GaN. An analysis of these results gives direct insight into the defect concentrations and the solubility of impurities with respect to the growth conditions (temperature, chemical potentials) and into possible mechanisms for passivation and compensation. Particularly, we discuss in detail the role of the nitrogen vacancy, which is commonly assumed to be the source for the “auto-do**” of GaN. Our results show that GaN has distinctively different defect properties compared to more “traditional” semiconductors such as Si, GaAs or ZnSe. This is explained in terms of the large mismatch in the atomic radii of Ga and N.

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Authors and Affiliations

  1. Xerox Palo Alto Research Center, 3333 Coyote Hill Road, 94304, Palo Alto, California

    Jörg Neugebauer & Chris G. Van de Walle

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  1. Jörg Neugebauer
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  2. Chris G. Van de Walle
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Reinhard Helbig

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© 1996 Friedr. Vieweg & Sohn Verlagsgesellschaft mbH

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Neugebauer, J., Van de Walle, C.G. (1996). Native defects and impurities in GaN. In: Helbig, R. (eds) Advances in Solid State Physics 35. Advances in Solid State Physics, vol 35. Springer, Berlin, Heidelberg. https://doi.org/10.1007/BFb0107538

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  • DOI: https://doi.org/10.1007/BFb0107538

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  • Print ISBN: 978-3-528-08043-3

  • Online ISBN: 978-3-540-75334-6

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