Double Zone Thermal CVD and Plasma Enhanced CVD Systems for Deposition of Films/Coatings with Eminent Conformal Coverage

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Advances in Manufacturing Technology and Management

Part of the book series: Lecture Notes in Mechanical Engineering ((LNME))

Abstract

The present work is regarding the study of double zone thermal chemical vapor deposition (CVD) and plasma enhanced chemical vapor deposition (PECVD) systems. Here, we have tried to describe the principle, working and technical details as well as the advantages and disadvantages associated with the abovementioned systems. Both the deposition variants, i.e., double zone thermal CVD and PECVD, offer a wide range of advantages like the uniformity of thin films along with easy accessibility over a wide range of precursors for nanomaterial synthesis. It is also concluded that the former system has an edge over other existing conventional deposition techniques as we can control the migration of the source particles, whereas PECVD offers the advantage of performing the deposition of thin films over comparatively low temperature which allows the usage of the substrate having a low melting point.

Shreya and Anukool Yadav—These authors have contributed equally

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Acknowledgments

We are indebted to Prof. Yogesh Singh, Vice-chancellor, Delhi Technological University, Delhi, India, for providing us the research opportunities. Our sincere gratitude to the companies, Nano Tec, Perungudi, Chennai, Tamil Nadu, India, for designing and employing the double zone thermal CVD system and TechnoS Instruments, J-422, RIICO Industrial Area, Sitapur, Jaipur-302022, India, APLab and Crown for assembling the PECVD in NRL.

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Correspondence to Nitin K. Puri .

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Shreya, Yadav, A., Khatri, R., Jain, N., Bhandari, A., Puri, N.K. (2023). Double Zone Thermal CVD and Plasma Enhanced CVD Systems for Deposition of Films/Coatings with Eminent Conformal Coverage. In: Singari, R.M., Jain, P.K., Kumar, H. (eds) Advances in Manufacturing Technology and Management. Lecture Notes in Mechanical Engineering. Springer, Singapore. https://doi.org/10.1007/978-981-16-9523-0_31

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  • DOI: https://doi.org/10.1007/978-981-16-9523-0_31

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