Abstract
In the present study an Ev+0.19 eV deep level is observed in boron doped Si after electron irradiation at room temperature. After prolonged anneals at temperatures between 200 and 300°C a gradual shift of the deep level with annealing time occurs however towards Ev+0.24 eV. The observed transition is much faster in Cz than in FZ silicon suggesting the involvement of oxygen. It is shown that this apparent gradual shift of the deep level in the bandgap can be explained by a gradual transformation of the divacancy with trap parameters (Ev+0.17 eV, capture cross-section σ∼1017 cm2) towards another defect with trap parameters (Ev+0.24 eV, ˃∼1015 cm2). The final defect is assumed to be a multi-vacancy/oxygen complex. First results are presented of an electron paramagnetic resonance (EPR) and infrared (IR) spectroscopy study before and after the transition to confirm this hypothesis.
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© 1996 Kluwer Academic Publishers
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Trauwaert, M.A. et al. (1996). Low Temperature Annealing Studies of the Divacancy in P-Type Silicon. In: Jones, R. (eds) Early Stages of Oxygen Precipitation in Silicon. NATO ASI Series, vol 17. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-0355-5_41
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DOI: https://doi.org/10.1007/978-94-009-0355-5_41
Publisher Name: Springer, Dordrecht
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