Abstract
Planar Al/GaN/Ni Schottky diodes were realized on GaN films deposited on sapphire substrates and characterized in the dark and under illumination. The optoelectronic characteristics of GaN photodetectors appear largely influenced by structural defects and impurities, which are clearly detected in photocurrent yield measurements. In particular, an exponential increase of the photocurrent is observed and explained in terms of a barrier lowering photoeffect, hence a light induced shrinking of the space charge region, related to carrier trap** at defects and impurities. Trap** events are also responsible for a dispersive behavior of the AC responsivity with the light chop** frequency. Such effects point out the importance of a proper selection of bias voltage and working fre15quency for GaN photodetector operations.
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Allegrini, P., Calvani, P., Girolami, M., Conte, G., Rossi, M.C. (2010). UV Schottky Sensors Based on Wide Bandgap Semiconductors. In: Malcovati, P., Baschirotto, A., d'Amico, A., Natale, C. (eds) Sensors and Microsystems. Lecture Notes in Electrical Engineering, vol 54. Springer, Dordrecht. https://doi.org/10.1007/978-90-481-3606-3_24
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DOI: https://doi.org/10.1007/978-90-481-3606-3_24
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