Abstract
An ab initio theoretical investigation of the structure of a twist grain boundary in Ge is performed whereby the intergranular total energy is mapped out over the entire range of possible relative in-plane translation states. The analysis leads to a prediction of the equilibrium translation state, structure, formation energy, and effective volume associated with this internal interface.
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For details regarding the methods used in the present calculations see M.C. Payne, P.D. Bristowe, and J.D. Joannopoulos, Phys. Rev. Lett. 58, 1348 (1987).
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© 1989 Springer-Verlag Berlin, Heidelberg
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Tarnow, E., Bristowe, P., Joannopoulos, J.D., Payne, M. (1989). Intergranular Total Energy Maps and the Structure of a Grain Boundary. In: Möller, H.J., Strunk, H.P., Werner, J.H. (eds) Polycrystalline Semiconductors. Springer Proceedings in Physics, vol 35. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-93413-1_1
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DOI: https://doi.org/10.1007/978-3-642-93413-1_1
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