Microstructure

Abstract

The Si-based light emitters to be discussed in this book are based on an RE implanted, standard MOS structure with an additional dielectric layer, also known from MNOS (metal–nitride–oxide–semiconductor) devices. There is a giant pool of literature about Si technology, Si processing, the structure and point defects in SiO2 and related materials, as well as about the structural properties of the Si–SiO₂ interface. Consequently, Sect. 2.1 reports only on the specific fabrication and device parameters used for the light emitter preparation. Section 2.2 touches briefly on the topic of point defects in SiO2 and SiON as well as the issue of RE diffusion under annealing, while Sect. 2.3 concentrates on the formation and the evolution of clusters.