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Reset Switching Statistics of TaOx-Based Memristor

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Resistive Switching: Oxide Materials, Mechanisms, Devices and Operations

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Abstract

In this work, the resistance switching mechanism of Reset process has been suggested through the statistics of the reset voltage and the reset current, which is consistent with the thermal-activated dissolution model. Furthermore, the variability nature of the switching parameters has been analyzed by screening the statistical data into different resistance ranges and the distributions are shown to be compatible with a Weibull distribution. Finally, we propose criteria for selecting high-performance memristor materials based on the statistical results and the temperature evolution of the conductive filament (CF) in three different memristor materials (TaOx, HfO2, and NiO). The high-performance materials tend to exhibit a higher Weibull slope and there are no variation and extra heat generated in the CF before the reset event.

This chapter was originally published as a paper in the Journal of Electroceramics: **aojuan Lian, Miao Wang, Peng Yan, J. Joshua Yang, Feng Miao, “Reset switching statistics of TaOx-based Memristor,” J Electroceramics, Vol. 39, nos 1–4 (2017), Pages 132–136. DOI: http://dx.doi.org/10.1007/s10832-017-0094-x.

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Acknowledgments

This work was supported in part by the National Key Basic Research Program of China (2015CB921600, 2013CBA01603), the National Natural Science Foundation of China (11374142, 61574076), the Postdoctoral Program of Jiangsu Province (1501031B), the Natural Science Foundation of Jiangsu Province (BK20130544, BK20140017, BK20150055), the Specialized Research Fund for the Doctoral Program of Higher Education (20130091120040), and Fundamental Research Funds for the Central Universities and the Collaborative Innovation Center of Advanced Microstructures.

Author Contributions X.J.L performed the experiments, did the statistics, and analyzed the data. X.J.L, F.M, and J.J.Y co-wrote the paper with all authors contributing to the discussion and preparation of the manuscript. All authors have given approval to the final version of the manuscript.

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Authors and Affiliations

  1. National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nan**g University, Nan**g, China

    **aojuan Lian, Miao Wang & Feng Miao

  2. The Department of Electrical and Computer Engineering, University of Massachusetts, Amherst, MA, USA

    Peng Yan & J. Joshua Yang

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  1. **aojuan Lian
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  2. Miao Wang
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  3. Peng Yan
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  4. J. Joshua Yang
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  5. Feng Miao
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Correspondence to Feng Miao .

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Editors and Affiliations

  1. Massachusetts Institute of Technology, Cambridge, MA, USA

    Jennifer Rupp

  2. Elettronica, Informazione Bioingegneria, Politecnico di Milano, Dipto di, MILANO, Milano, Italy

    Daniele Ielmini

  3. Research Centre Juelich, Jülich, Germany

    Ilia Valov

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Lian, X., Wang, M., Yan, P., Yang, J.J., Miao, F. (2022). Reset Switching Statistics of TaOx-Based Memristor. In: Rupp, J., Ielmini, D., Valov, I. (eds) Resistive Switching: Oxide Materials, Mechanisms, Devices and Operations. Electronic Materials: Science & Technology. Springer, Cham. https://doi.org/10.1007/978-3-030-42424-4_8

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