Abstract
The capability to fabricate two-dimensional (2D) semiconductor diode laser array is a key and most important step towards making wafer-scale low-cost lasers. The recent emergence of vertical cavity surface emitting laser (VCSEL) facilitates the fabrication such large 2D arrays. In this paper, I will review recent progress on a novel large-aperture single-mode VCSEL and a 2D multiple-wavelength VCSEL array for ultrahigh bandwidth applications. We demonstrated a passive antiguide region (PAR) VCSEL which emits a stable single mode with very low threshold, a large aperture, and fixed polarization. We also demonstrated multi-wavelength VCSEL arrays with repeatable wavelength spans over 20 nm grown by Molecular Beam Epitaxy. The wavelength shift is achieved by varying the GaAs growth rate across the wafer using a patterned backing wafer to induce a temperature profile. Such multiple wavelength laser arrays are promising for ultra-high bandwidth optical transmission and switching systems using wavelength division multiplexing (WDM).
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
Similar content being viewed by others
References
C. J. Chang-Hasnain, J. P. Harbison, C.-E. Zah, M. W. Maeda, L. T. Florez, N. G. Stoffel and T.-P. Lee, IEEE J. of Quantum Electron., vol. 27, 6 pp. 1368–1376, June 1991.
L.E. Eng, W. Yuen, R.F. Nabiev, K. Toh„ K. Bacher, M. Larson, G. Ding, J.S. Harris, and C.J. Chang-Hasnain, “Multiple Wavelength Vertical Cavity Laser Arrays on Patterned Substrates”, to appear in IEEE J. Quantum Electron. Special Issue on Semiconductor Lasers, June 1995.
A. Willner, C. J. Chang-Hasnain and J. Leight, “2-D WDM optical interconnections using multiple-wavelength VCSEL’s for simultaneous and reconfigurable communication among many planes,” IEEE Photon. Tech. Lett., Vol. 5, pp. 838–841, 1993.
F. Koyoma, T. Mukaihara,Y. Hayashi, N. Ohnoki, N. Hatori and K. Iga, “Wavelength Control of Vertical Cavity Surface Emitting Lasers by Using Nonplanar MOCVD,” Electronics Letters, Nov. 1994.
T. Wipiejewski, M. G. Peters and L. A. Coldren, “Vertical Cavity Surface Emitting Laser Diodes with Post-Growth Wavelength Adjustment,” LEOS Annual Meeting, Boston, Nov. 1994.
R. Fischer, J. Klem, T. J. Drummond, R. E. Thorne, W. Kopp, H. Morkoc and A. Y. Cho, “Incorporation rates of gallium and aluminum on GaAs during molecular beam epitaxy at high substrate temperatures,” J. Appl. Phys., Vol. 54, pp. 2508–2510, 1983.
W. D. Goodhue, J. J. Zayhowski and K. B. Nichols, “Planar quantum wells with spatially dependent thicknesses and AL content,” J. Vac. Sci. Technol. B, Vol. 6, pp. 846–849, 1988.
D. E. Bossi, W. D. Goodhue, M. C. Finn, K. Rauschenbach, J. W. Bates and R. H. Rediker, “Reduced confinement antennas for GaA1As integrated optical waveguides,” Appl. Phys. Lett., Vol. 56, pp. 420–422, 1990.
Randy Geels, Scott W. Corzine and Larry A. Coldren, “InGaAs vertical cavity surface-emitting lasers,” IEEE J Quantum Electron., Vol. 27, pp. 1359–1367, 1991.
K. Tai, L. Yang, Y. H. Wang, J. D. Wynn and A. Y. Cho, “Drastic reduction of series resistance in doped semiconductor distributed Bragg reflectors for surface emitting lasers,” Appl. Phys. Lett., 56, pp. 2496–2498, 1990.
L. A. Buckman, M. S. Wu, G. Giaretta, G. S. Li, P. K. Pepeljugoski, J. W. Goodman, A. Varma, K. Y. Lau and C. J. Chang-Hasnain, “A Novel All-Optical Self-Routed Wavelength-Addressable Network (SWANET)”, to be presented at the Optical Fiber Communications Conference, San Diego, February, 1995.
K. Bacher, B. Pezeshki, S. Lord and J. S. Harris, “Molecular beam epitaxy growth of vertical cavity optical devices with in situ corrections,” Appl. Phys. Lett. 61, pp. 1387–1389, 1992.
Y. M. Young, M. R. T. Tan, B. W. Liang, S. Y. Wang and D. E. Mars, “In situ thickness monitoring and control for highly reproducible growth of distributed Bragg reflectors,” J. Vac. Sci. Technol. B 12, pp. 1221–1224, 1994.
F. G. Bobel, H. Moller, A. Wowchak, B. Hertl, J. Van Hove, L. A. Chow and P. P. Chow, “Pyrometric interferometry for real time molecular beam epitaxy process monitoring,” J. Vac. Sci. Technol. B 12, 1207–1210, 1994.
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1995 Springer Science+Business Media New York
About this chapter
Cite this chapter
Chang-Hasnain, C.J., Eng, L.E. (1995). Multi-Wavelength Vertical Cavity Laser Arrays Grown on a Patterned Backup Substrate. In: Tamir, T., Griffel, G., Bertoni, H.L. (eds) Guided-Wave Optoelectronics. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-1039-4_9
Download citation
DOI: https://doi.org/10.1007/978-1-4899-1039-4_9
Publisher Name: Springer, Boston, MA
Print ISBN: 978-1-4899-1041-7
Online ISBN: 978-1-4899-1039-4
eBook Packages: Springer Book Archive