Abstract
Optical gain coefficient involving excitonic transitions are calculated for index-guided ZnCdSe/ZnMgSSe multiple quantum well (MQW) layers as a function of operating wavelength. Comparison of threshold current density among unstrained, compressively strained and tensile strained cases are presented. The calculations include strain induced changes in energy band gaps and band offsets. The tensile strained Zn.8Cd .2SeZn.2Mg.8S.03Se.97 quantum well lasers, grown on lattice matched InP substrates, are predicted to operate at threshold current density as low as 175 A/cm2.
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Huang, W., Jain, F.C. (1995). Modeling of Optical Gain Due to Excitonic Transitions in Index-Guided ZnCdSe/ZnMgSSe Multiple Quantum Well Blue-Green Lasers. In: Tamir, T., Griffel, G., Bertoni, H.L. (eds) Guided-Wave Optoelectronics. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-1039-4_17
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DOI: https://doi.org/10.1007/978-1-4899-1039-4_17
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