Abstract
We report the first direct observation of ballistic hole transport in semiconductors, via energy spectroscopy experiments. Light holes are preselected and injected via tunnelling into 31 nm thick p+ GaAs layers. About 10% of the injected holes have been found to traverse ballistically maintaining distributions ≈ 35 meV wide, with a mean free path of about 14 nm. Resonances in the injection currents, resulting from quantum interference effects of the ballistic holes, are used to support the light nature of the ballistic holes.
This paper was published previously in Physical Review Letters (Phys. Rev. Lett. 60, 828 (1988)) and is reproduced by kind permission of the American Physical Society.
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© 1989 Plenum Press, New York
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Heiblum, M., Seo, K., Meier, H.P., Hickmott, T.W. (1989). Observation of Ballistic Holes. In: Abram, R.A., Jaros, M. (eds) Band Structure Engineering in Semiconductor Microstructures. NATO ASI Series, vol 189. Springer, Boston, MA. https://doi.org/10.1007/978-1-4757-0770-0_14
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DOI: https://doi.org/10.1007/978-1-4757-0770-0_14
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