Abstract
This paper describes the motivation for develo** angular forces in transition metals and semiconductors, and discusses the calculation of such forces and their relation to observed structures. The successes and failures of radial force schemes are first briefly described. Subsequently, existing methods for generating angular forces are discussed, with emphasis on methods based on tight-binding analysis. Plots of the angular potentials are given for model transition metals and semiconductors. The features in the potentials are used to interpret observed bond angles in these systems.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
Similar content being viewed by others
References
M. W. Finnis, A. T. Paxton, D. G. Pettifor, A. P. Sutton, and Y. Ohta, Phil. Mag. A58:143(1988).
A. E. Carlsson in: “Solid State Physics: Advances in Research and Applications”, edited by H. Ehrenreich and D. Turnbull, Volume 43, (Academic, New York) (in press).
M. S. Daw and M. I. Baskes, Phys. Rev. Lett. 50:1285 (1983); Phys. Rev. B 29: 6443 (1984).
M. W. Finnis and J. M. Sinclair, Phil. Mag. A50:45 (1984); Phil. Mag. A53:161 (1986).
V. Heine and D. Weaire, in: “Solid State Physics: Advances in Research and Applications”, edited by H. Ehrenreich, R. Seitz and D. Turnbull, Volume 35, (Academic, New York, 1970), p. 1.
J. M. Harder and D. J. Bacon, Phil. Mag. A54:641 (1986).
S. M. Foiles, M. I. Baskes, and M. S. Daw, Phys. Rev. B 33:7983 (1986); Phys. Rev. B 37:10378 (1988).
G. J. Ackland, G. Tichy, V. Vitek, and M. W. Finnis, Phil. Mag. A56:735 (1987).
G. J. Ackland and M. W. Finnis, Phil. Mag. A54:301 (1986).
C. P. Flynn, “Point Defects and Diffusion”, (Clarendon, Oxford, 1972), p. 6.
R. Benedek, J. Phys. F8:1119 (1978).
F. Ducastelle, J. Phys. (Paris) 31:1055 (1970).
Y. Ohta, M. W. Finnis, D. G. Pettifor, and A. P. Sutton, J. Phys. F17:L273 (1987).
S. M. Foiles, Surf. Sci. 191:L779 (1987).
P. Turchi and F. Ducastelle, in: “The Recursion Method and Its Applications”, edited by D. G. Pettifor and D. L. Weaire, (Springer, New York, 1985), p. 104.
E. Pearson, T. Takai, T. Halicioglu, and W. A. Tiller, J. Cryst. Growth 70:33 (1984).
F. H. Stillinger and T. A. Weber, Phys. Rev. B 31:5262 (1985).
R. Biswas and D. R. Hamann, Phys. Rev. Lett. 55:2001 (1985).
R. Biswas and D. R. Hamann, Phys. Rev. B 36:6434 (1987).
D. W. Brenner and B. J. Garrison, Phys. Rev. B 34:1304 (1986).
J. Tersoff, Phys. Rev. Lett. 56:632 (1986).
J. Tersoff. Phys. Rev. B 37:6991 (1988).
M. I. Baskes, Phys. Rev. Lett. 59:2666 (1987).
B. W. Dodson, Phys. Rev. B 35:2795 (1987).
K. E. Khow and S. Das Sarma, Phys. Rev. B 38:3318 (1988).
W. A. Harrison, “Electronic Structure and the Properties of Solids”, (W. H. Freeman, San Francisco, 1980), Chapter 7.
M. van Schilfgaarde and W. A. Harrison, Phys. Rev. B 33:2653 (1986).
J. C. Phillips, Phys. Rev. 166:832 (1968).
R. M. Martin, Phys. Rev. 186:871 (1969).
Reference 26, Chapter 9.
J. A. Moriarty, Phys. Rev. Lett. 55:1502 (1985).
J. A. Moriarty, Phys. Rev. B 38:3199 (1988).
R. J. Harrison, Surf. Sci. 144:215 (1984).
K. W. Jacobsen, J. K. Nørskov, and M. J. Puska, Phys. Rev. B 35:7423 (1987).
C. C. Matthai, P. J. Grout, and N. H. March, J. Phys. Chem. Solids 42:317 (1981).
F. Cyrot-Lackmann, J. Phys. Chem. Solids 29:1235.
See articles by R. Haydock, (p. 216) and M. J. Kelley (p. 296), in Ref. 5.
E. T. Jaynes, Phys. Rev. 106:620 (1957); Phys. Rev. 108:171 (1957).
R. Collins and A. Wragg, J. Phys. A10:1441 (1977).
L. R. Mead and N. Papanicolaou, J. Math. Phys. 25:2404 (1984).
R. H. Brown and A. E. Carlsson, Phys. Rev. B 32:6125 (1985).
K. Hirai and J. Kanamori, J. Phys. Soc. Jpn. 50:2265 (1981).
A. E. Carlsson and N. W. Ashcroft, Phys. Rev. B 27:2101 (1983.
A. E. Carlsson, Phys. Rev. B 32:4866 (1985).
F. Ducastelle and F. Cyrot-Lackmann, J. Phys. Chem Solids 32: 285 (1971).
V. Heine and J. H. Samson, J. Phys. F10:2609 (1980).
V. Heine and J. H. Samson, J. Phys. F13:2155 (1983).
W. A. Harrison, “Solid State Table of the Elements,” Ref. 26.
J. Donohue, “The Structures of the Elements”, (Wiley, New York, 1974), Chapter 8.
Reference 50, Chapter 9.
In typical calculations (see Ref. 42, for example), the ∂UTB/∂µ4 contribution to the V effn changes sign at Nv ≈ 0.25 and 0.75. In group VI elements Nv < 0.67(=4/6), since not all the electrons reside in the p-band.
F. H. Stillinger, T. A. Weber, and R. A. LaViolette, J. Chem. Phys. 85:6460 (1986).
F. Ducastelle and F. Cyrot-Lackmann, J. Phys. Chem. Solids, 31:1295 (1970).
R. B. Phillips and A. E. Carlsson (unpublished).
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1989 Plenum Press, New York
About this chapter
Cite this chapter
Carlsson, A.E. (1989). Angular Forces in Transition Metals and Diamond Structure Semiconductors. In: Vitek, V., Srolovitz, D.J. (eds) Atomistic Simulation of Materials. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-5703-2_11
Download citation
DOI: https://doi.org/10.1007/978-1-4684-5703-2_11
Publisher Name: Springer, Boston, MA
Print ISBN: 978-1-4684-5705-6
Online ISBN: 978-1-4684-5703-2
eBook Packages: Springer Book Archive