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High Precision de Haas-Van Alphen Measurements on a Two-Dimensional Electron Gas

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Proceedings of the 17th International Conference on the Physics of Semiconductors

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Abstract

Using a new, highly sensitive, torsional magnetometer technique, we have observed the de Haas-van Alphen Effect in GaAs/(AlGa)As two-dimensional electron systems. The measurements promise to allow direct determination of the density of states.

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References

  1. For a review see T. Ando, A. Fowler, and F. Stern, Rev. Mod. Phys. 54, 437 (1982).

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  2. T. Ando and Y. Uemura, J. Phys. Soc. Jap. 36, 959 (1974).

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Author information

Authors and Affiliations

  1. AT&T Bell Laboratories, 07974, Murray Hill, NJ, USA

    J. P. Eisenstein, H. L. Störmer, V. Narayanamurti & A. C. Gossard

Authors
  1. J. P. Eisenstein
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  2. H. L. Störmer
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  3. V. Narayanamurti
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  4. A. C. Gossard
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Editor information

Editors and Affiliations

  1. Xerox Palo Alto Research Center, 3333 Coyote Hill Road, 94340, Palo Alto, CA, USA

    James D. Chadi

  2. Department of Applied Physics W.W. Hansen Laboratories, Stanford University, 94305, Stanford, CA, USA

    Walter A. Harrison

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© 1985 Springer Science+Business Media New York

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Eisenstein, J.P., Störmer, H.L., Narayanamurti, V., Gossard, A.C. (1985). High Precision de Haas-Van Alphen Measurements on a Two-Dimensional Electron Gas. In: Chadi, J.D., Harrison, W.A. (eds) Proceedings of the 17th International Conference on the Physics of Semiconductors. Springer, New York, NY. https://doi.org/10.1007/978-1-4615-7682-2_66

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  • DOI: https://doi.org/10.1007/978-1-4615-7682-2_66

  • Publisher Name: Springer, New York, NY

  • Print ISBN: 978-1-4615-7684-6

  • Online ISBN: 978-1-4615-7682-2

  • eBook Packages: Springer Book Archive

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