Abstract
The tight-binding energy minimization method is combined with a renormalization-group calculation to study the structural phase transition of the Si(100) surface. The ground-state reconstruction is found to be either p(2x2) or c(4x2) rather than (2x1), and the critical temperatures corresponding to order-disorder phase transitions are evaluated. Similar results are obtained for the Ge(100) surface.
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© 1985 Springer Science+Business Media New York
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Ihm, J., Lee, D.H., Joannopoulos, J.D., **ong, J.J. (1985). A Total Energy-Renormalization Group Approach to the Phase Transition of Solid Surfaces. In: Chadi, J.D., Harrison, W.A. (eds) Proceedings of the 17th International Conference on the Physics of Semiconductors. Springer, New York, NY. https://doi.org/10.1007/978-1-4615-7682-2_10
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DOI: https://doi.org/10.1007/978-1-4615-7682-2_10
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