Abstract
Recently indium oxide (In2O3) attracted attention as a material for sensing layers in semiconducting gas sensors. Compared to frequently investigated materials like tin dioxide (SnO2), tungsten trioxide (WO3), or gallium oxide (Ga2O3) indium oxide offers some unique properties. The most prominent one is its selectivity to oxidizing gases such as ozone (O3) or nitrogen dioxide (NO2) at low operating temperatures (<150°C). Combined with the photoreduction properties of nanocast, porous In2O3 highly selective sensing layers with a fast response can be prepared. In some cases even room temperature measurements are possible; therefore this material allows for designing low-power sensors without the need for special sensor substrates (e.g., μ-hotplates). Detailed analysis of the sensing mechanism reveals that known sensing models are not able to describe the observed effects. Therefore a new sensing model for ordered nanoporous In2O3 is presented which will be applicable for nonstructured material too.
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The authors thank Claus-Dieter Kohl, Sara Morandi, Cesare Malagù, Mariangela Latino, and Giovanni Neri for the valuable discussions.
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Wagner, T., Donato, N., Tiemann, M. (2013). New Sensing Model of (Mesoporous) In2O3 . In: Kohl, CD., Wagner, T. (eds) Gas Sensing Fundamentals. Springer Series on Chemical Sensors and Biosensors, vol 15. Springer, Berlin, Heidelberg. https://doi.org/10.1007/5346_2013_57
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