Abstract
The thermo-mechanical robustness of interconnect structures is a key reliability concern for integrated circuits. The miniaturization process and the package/silicon interaction result in an increase of the thermal stresses whilst new low-k materials with degraded mechanical properties are used, increasing the likelihood of adhesion failure in the interconnect structures.
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Gonzalez, D. et al. (2006). Simulation of Cross-Sectional Nanoindentation in Interconnect Structures with Cohesive Elements. In: Gdoutos, E.E. (eds) Fracture of Nano and Engineering Materials and Structures. Springer, Dordrecht. https://doi.org/10.1007/1-4020-4972-2_339
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DOI: https://doi.org/10.1007/1-4020-4972-2_339
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