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In-Core Power Measurement Using SiC Semiconductor Detector

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Abstract

A SiC detector was fabricated and tested in harsh radiation environment of the High Flux Advanced Neutron Application Reactor (HANARO) reactor core at Korea Atomic Energy Research Institute (KAERI). A 4H-SiC with 30 µm thick epitaxial layer was used as the radiation sensor, and the detector was designed to be tolerable against thermal and radiation damages. Alpha response and I-V characteristics of fabricated SiC sensor was measured and detection performance of the SiC detector was evaluated in a neutron field of HANARO ex-core neutron irradiation facility. After preliminary tests, reactor power monitoring using the SiC detector was carried out by inserting it into the HANARO irradiation hole, IP-4. Radiation-induced current of the detector was recorded as reactor power increased up to 10 MWth. Maximum thermal and fast neutron fluxes were 9.4×1012 and 2.5×109 neutrons/cm2/sec, respectively, and total neutron fluence irradiated on the detector was 4.7×1016 neutrons/cm2. The detector showed good linearity of response up to the tested fluence, with R2 = 0.9997. Response speed of SiC detector was compared to that of a Rh self-powered neutron detector (SPND) in terms of signal saturation time. Averaged SiC detector saturation time was 12.8 seconds, approximately 11 times faster that of the Rh SPND.

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Acknowledgments

This work was supported by the Korea Institute of Energy Technology Evaluation and Planning (KETEP) grant funded by the Korea government (MOTIE) (20181510102340, Development of a real-time detection system for unidentified RCS leakage less than 0.5 gpm), and the research fund of Hanyang University (HY-2018).

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Correspondence to Yong Kyun Kim.

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Park, J., Son, J., Kim, Y.K. et al. In-Core Power Measurement Using SiC Semiconductor Detector. J. Korean Phys. Soc. 76, 306–310 (2020). https://doi.org/10.3938/jkps.76.306

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  • DOI: https://doi.org/10.3938/jkps.76.306

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