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Improvement of the Beam-Wave Interaction Efficiency Based on the Coupling-Slot Configuration in an Extended Interaction Oscillator

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Abstract

A method aimed at improving the beam-wave interaction efficiency by changing the coupling slot configuration has been proposed in the study of extended interaction oscillators (EIOs). The dispersion characteristics, coupling coefficient and interaction impedance of the high-frequency structure based on different types of coupling slots have been investigated. Four types of coupled cavity structures with different layouts of the coupling slots have been compared to improve the beamwave interaction efficiency, so as to analyze the beam-wave interaction and practical applications. In order to determine the improvement of the coupling slot to a coupled cavity circuit in an EIO, we designed four nine-gap EIOs based on the coupled cavity structure with different coupling slot configurations. With different operating frequencies and voltages takes into consideration, beam voltages from 27 to 33 kV have been simulated to achieve the best beam-wave interaction efficiency so that the EIOs are able to work in the 2π mode. The influence of the Rb and the ds on the output power is also taken into consideration. The Rb is the radius of the electron beam, and the ds is the width of the coupling slot. The simulation results indicate that a single-slot-type EIO has the best beam-wave interaction efficiency. Its maximum output power is 2.8 kW and the efficiency is 18% when the operating voltage is 31 kV and electric current is 0.5 A. The output powers of these four EIOs that were designed for comparison are not less than 1.7 kW. The improved coupling-slot configurations enables the extended interaction oscillator to meet the different engineering requirements better.

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References

  1. Z. Chang, L. Meng, Y. Yin, C. Xu, L. Bi and Z. Zhang, in Proc. IEEE IVEC (Apr. 2016), p. 1, DOI: 10.1109/IVEC.2016.7561952.

    Google Scholar 

  2. S. Chen, C. Ruan, Y. Wang, C. Zhang, D. Zhao, X. Yang and S. Wang, IEEE Trans. Plasma Sci. 42, 91 (2014); DOI: 10.1109/TPS.2013.2293133.

    Article  ADS  Google Scholar 

  3. H. Yin, A. W. Cross, W. He, A. D. R. Phelps, K. Ronald, D. Bowes and C. W. Robertson, Phys. Plasmas 16, 063105–1 (2009); DOI: 10.1063/1.3155444.

    Article  ADS  Google Scholar 

  4. K. Fujisawa, IEEE Trans. Electron Devices 11, 381 (1964); DOI: 10.1109/T-ED.1964.15346.

    Article  ADS  Google Scholar 

  5. J. Pasour, E. Wright, K. T. Nguyen, A. Balkcum, F. N. Wood, R. E. Myers and B. Levush, IEEE Trans. Electron Devices 61, 1630 (2014); DOI: 10.1109/TED.2013.2295771.

    Article  ADS  Google Scholar 

  6. W. R. Day and J. A. Noland, Proc. 5th Internat’l Conf. on Microwave Tubes (1964), p. 157.

    Google Scholar 

  7. J. H. Booske, R. J. Dobbs, C. D. Joye, C. L. Kory, G. R. Neil, G. Park, J. Park and R. J. Temkin, IEEE THz Sci. Technol 1, 54 (2011); DOI: 10.1109/TTHZ.2011.2151610.

    Article  Google Scholar 

  8. L. Renjie and R. Cunjun, in Proc. IEEE IVEC (Apr. 2016), p. 1, DOI: 10.1109/IVEC.2016.7561954.

    Google Scholar 

  9. R. Xuxun, W. Jianxun, D. Kun, L. Guo, S. Guoxiang, F. Hao and E. A. Balfour, IEEE Trans. Electron Devices 63, 4074 (2016); DOI: 10.1109/TED.2016.2595596.

    Article  ADS  Google Scholar 

  10. Y. Yin, W. He, L. Zhang, H. Yin, C. W. Robertson and A. W. Cross, IEEE Trans. Electron Devices 63, 512 (2016); DOI: 10.1109/TED.2015.2502950.

    Article  ADS  Google Scholar 

  11. M. Cusick, R. Begum, D. Gajaria, T. Grant, P. Kolda, J. Legarra, C. Meyer, J. L. Ramirez-Aldana, D. S. Pedro, B. Stockwell and G. Yamane, in Proc. IEEE 13th IVEC (Apr. 2012), p. 227.

    Google Scholar 

  12. W. Wiejak, in Proc. 18th Int. Conf. Microw. Radar Wireless Commun (Jun. 2010), p. 1.

    Google Scholar 

  13. M. Chodorow and E. J. Nalos, in 1956 Proceedings of the IRE (1956), p. 649.

    Google Scholar 

  14. M. Chodorow and T. wessel-berg, IRE Trans on Electron Devices (1960).

    Google Scholar 

  15. A. I. Toreev, V. K. Fedorov and E. V. Patrusheva. Journal of Communication Technology and Electronic 54, 952 (2005); DOI: 10.1134/S1064226909080117.

    Article  Google Scholar 

  16. D. Berry, H. Deng, R. Dobbs, P. Horoyski, M. Hyttinen, A. Kingsmill, R. MacHattie, A. Roitman, E. Sokol and B. Steer, IEEE Trans. Electron Devices 61, 1830 (2014); DOI: 10.1109/TED.2014.2302741.

    Article  ADS  Google Scholar 

  17. J. Hwang et al., J. Korean Phys. Soc. 69, 940 (2016), https://doi.org/10.3938/jkps.69.940.

    Article  ADS  Google Scholar 

  18. E. Y. Sun and S. H. Chao, IEEE Trans. Microw. Theory Tech. 43, 1983 (1995).

    Article  ADS  Google Scholar 

  19. Y. Yin, B. Wang, L. Bi, Z. Chang, Z. Zhang, C. Xu and L. Meng, in Proc. IEEE IVEC (Apr. 2016), p. 1, DOI: 10.1109/IVEC.2016.7561860.

    Google Scholar 

  20. Z. Zhang, Y. Yin, L. Bi, Z. Chang, C. Xu, B. Wang and L. Meng, Phys. Plasmas 24, 043103 (2017); DOI: 10.1063/1.4979353.

    Article  ADS  Google Scholar 

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Zhu, S., Yin, Y., Bi, L. et al. Improvement of the Beam-Wave Interaction Efficiency Based on the Coupling-Slot Configuration in an Extended Interaction Oscillator. J. Korean Phys. Soc. 73, 1362–1369 (2018). https://doi.org/10.3938/jkps.73.1362

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  • DOI: https://doi.org/10.3938/jkps.73.1362

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