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Electrical properties of indium-tin-oxide films treated with an intense ion beam current

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Abstract

The authors investigated the electrical properties of low-temperature-deposited indium-tin-oxide (ITO) films treated with an argon-ion beam (AIB) at high current density and low energy. Experimental data showed that ITO films on PET substrates treated in this manner had higher conductivity than the PET films treated thermally. X-ray diffraction indicated that the AIB ITO films had a poly-crystalline-like structure and that amorphous regions were present in PET substrates. Scanning electron microscopy (SEM) showed that the AIB ITO film surfaces had smaller cracks and exhibited dense bonding, presumably caused by instantaneous melting of ITO films by the high-current AIB beam. Consequently, the authors speculate that the effects of ion-beam treatment are driven by surface heating due to atomic collisions.

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Authors and Affiliations

  1. Department of Physics, Yeungnam University, Gyeongsan, 712-749, Korea

    Dong Ho Kim, Seung Hun Yu, Jonghoon Yi, ** Hyuk Kwon & ** Seog Gwag

  2. School of Chemical Engineering, Yeungnam University, Gyeongsan, 712-749, Korea

    Chan-Wook Jeon

  3. Department of Advanced Materials Engineering for Information & Electronics and Regional Innovation Center-Components and Materials for Information Display, Kyung Hee University, Yongin, 446-701, Korea

    Phil Kook Son

Authors
  1. Dong Ho Kim
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  2. Seung Hun Yu
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  3. Jonghoon Yi
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  4. ** Hyuk Kwon
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  5. ** Seog Gwag
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  6. Chan-Wook Jeon
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  7. Phil Kook Son
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Correspondence to ** Seog Gwag.

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Kim, D.H., Yu, S.H., Yi, J. et al. Electrical properties of indium-tin-oxide films treated with an intense ion beam current. Journal of the Korean Physical Society 63, 1156–1159 (2013). https://doi.org/10.3938/jkps.63.1156

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  • DOI: https://doi.org/10.3938/jkps.63.1156

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