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Interface Design Development for Growing Short-Period InAs/GaSb Superlattices by Molecular-Beam Epitaxy

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Abstract

The problems of growing short-period InAs/GaSb superlattices on GaSb (100) substrates by molecular-beam epitaxy are studied. For InAs/GaSb epitaxial heterostructures, a method for forming “InSb-like” atomically smooth interfaces with an ultrathin intermediate In(As)Sb layer is developed. This technique allowed growth of a short-period superlattice containing 50 InAs/GaSb periods. In situ growth control using high-energy electron diffraction and post-growth studies of the superlattice using atomic-force microscopy and X-ray diffraction confirm the efficiency of the technique for fabricating detector structures based on type-II superlattices.

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Authors and Affiliations

  1. Lebedev Physical Institute, Russian Academy of Sciences, 119991, Moscow, Russia

    V. S. Krivobok, D. A. Pashkeev, A. V. Klekovkin, I. I. Minaev, K. A. Savin, G. N. Eroshenko, A. E. Goncharov & S. N. Nikolaev

  2. Orion R&D Co., 143090, Moscow, Russia

    V. S. Krivobok & A. E. Goncharov

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  1. V. S. Krivobok
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  2. D. A. Pashkeev
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Translated by A. Kazantsev

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Krivobok, V.S., Pashkeev, D.A., Klekovkin, A.V. et al. Interface Design Development for Growing Short-Period InAs/GaSb Superlattices by Molecular-Beam Epitaxy. Bull. Lebedev Phys. Inst. 50, 396–402 (2023). https://doi.org/10.3103/S1068335623090051

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