Abstract
Finite element method was used to calculate the distribution of temperatures in growth cells of the toroid TC-40 -type HPA. The experimental investigations of the process of growing type IIa diamond single crystals were performed in high-pressure cells with two growth layers. It is shown that in using the cell materials having appropriate properties and defined configuration of the system of the resistive heating the temperature gradients are 5.4–5.6°C/mm and the growth rate is 2.46 mg/h. The total weight of obtained structurally perfect type IIa diamond single crystals in the upper and lower growth layers is 1.18 and 1.13 carats, respectively, the nitrogen content in all grown crystals is 1–3 ppt.
Similar content being viewed by others
References
Strong, H.M. and Wentorf, R.H, The growth of large diamond crystals, J. Naturwisenschaften, 1972, no. 1, pp. 1–7.
Strong, H.M. and Taft, R., USA Patent 4034066, 1977.
Richard, E.T. and Shankarapa, B.S., RF Patent 2252066, 1999.
Pal’yanov, Yu.N, Malinovsky, I.Yu., Borzdov, Yu.M., et al., Growing of large diamond crystals on the “split sphere” type apparatuses without presses, Dokl. USSR Acad. Sci., 1990, vol. 315, no. 5, pp.1221–1224.
Novikov, N.V., Advancement of the superhard materials synthesis and the expansion of their applications, in Sverkhtverdye materially: sintez, svoistva, primenenie (Superhard materials: synthesis, properties, applications), Kiev: Naukova Dumka, 1983.
Lysakovs’kii, V.V, Problems of seed-growing diamond single crystals with the use of hexadie high-pressure apparatuses of large volume, in Porodorazrushayushchii i metalloobrabatyvayushchii instrument—tekhnika i technologiya ego izgotovleniya i primeneniya (Rock destruction and metal-working tools—techniques and technology of the tool production and applications), Collect. Papers, Kiev: Bakul’ ISM, Nat. Ac. Sci. Ukraine, 2015, issue 17, pp. 191–203.
Lysakovs’kii, V.V., Novikov, N.V., Nagornyi V.V., et al., Growth kinetics of diamond single crystals in a hexadie high-pressure apparatus, Ibid., 2015, issue 17, pp. 209–213.
Razpabotat’ I osvoit’ vypusk apparatov vysokogo davleniya tsilindricheskogo tipa ob”emom 25 cm3 dlya sinteza monokristallov almazov s ispol’zovaniem litsenzii na proizvodstvo tverdogo splava (To develop and master the output of high-pressure apparatuses of cylindrical type with a volume of 25 cm3 to synthesize diamond single crystals using the license on the hard alloy production), Report on the project 0107, Kiev: ISM UkrSSR Academy of Sciences, 1986, the State Registration no. 0186004708.
Bezrukov, V.A.., Bezrukov, G.N., Butuzov, V.P., et al., Morphology of diamond crystals synthesized in wide ranges of temperatures and pressures, in Proc. All-USSR Mineral. Society, 1996, issue 1, pp. 33–36.
Zinkevich, O.V., Metod konechnykh elementov v tekhnike (Finite element method in engineering), Moscow: Mir, 1976.
Novikov, N.V., Levitas, V.I., Shestakov, S.I., Lyeshchuk, A.A., and Dushinskaya, G.V, Modeling of electrical, temperature fields and the fields of thermotensions in HPA by finite element method, Superhard Mater., 1983, no. 3, pp. 3–8.
Lyeshchuk, O, Computational modelling of superhard materials synthesis, Comp. Mater. Sci., 2010, vol. 49, no. 1S, pp. 85–94.
Boyd, S.R., Kiflawi, I., and Woods, G.S, and A defect concentration in diamond, Phil. Mag. B., 1994, vol. 69, no. 6, pp. 1149–1153.
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Ukrainian Text © A.V. Burchenia, V.V. Lysakovs’kii, S.O. Gordeyev, S.O. Ivakhnenko, A.M. Kutsai, O.M. Suprun, 2017, published in Sverkhtverdye Materialy, 2017, Vol. 39, No. 3, pp. 3–10.
About this article
Cite this article
Burchenia, A.V., Lysakovs’kii, V.V., Gordeyev, S.O. et al. Calculation of the temperature distribution at the HPHT growing of diamond single crystals in cells with two growth layers. J. Superhard Mater. 39, 149–154 (2017). https://doi.org/10.3103/S1063457617030017
Received:
Published:
Issue Date:
DOI: https://doi.org/10.3103/S1063457617030017