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Develo** and Manufacturing a Molecular Single-Electron Transistor with Isolated Side Gates

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Bulletin of the Russian Academy of Sciences: Physics Aims and scope

Abstract

A version of a molecular nanotransistor with improved efficiency and reliable isolation of side gates is developed and tested. The correlated nature of electronic transport in the transistor and high resistance of the isolation of the gates (more than 1 TΩ) ensure the correct mode of measuring the transistor control characteristics.

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ACKNOWLEDGMENTS

This work was supported by the Russian Foundation for Basic Research, grant no. 18-37-00414.

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Authors and Affiliations

  1. Faculty of Physics, Moscow State University, 119991, Moscow, Russia

    E. K. Morozova, V. R. Gaidamachenko, S. A. Daghesyan, E. S. Soldatov & E. K. Beloglazkina

  2. Center for Quantum Technologies, Moscow State University, 119991, Moscow, Russia

    S. A. Daghesyan & E. S. Soldatov

Authors
  1. E. K. Morozova
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  2. V. R. Gaidamachenko
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  3. S. A. Daghesyan
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  4. E. S. Soldatov
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  5. E. K. Beloglazkina
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Corresponding author

Correspondence to E. S. Soldatov.

Additional information

Translated by V. Alekseev

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Morozova, E.K., Gaidamachenko, V.R., Daghesyan, S.A. et al. Develo** and Manufacturing a Molecular Single-Electron Transistor with Isolated Side Gates. Bull. Russ. Acad. Sci. Phys. 83, 1–5 (2019). https://doi.org/10.3103/S1062873819010179

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  • DOI: https://doi.org/10.3103/S1062873819010179

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