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Tritium Induced Defects in Amorphous Silicon

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Abstract

We report the growth of tritium induced defects in tritium doped hydrogenated amorphous silicon (a-Si:H.T) as measured by electron spin resonance (ESR) and photothermal deflection spectroscopy (PDS). The measurements allow one to examine the accumulation of defects in a-Si:H.T where the defect production mechanism is known. Defects produced by tritium decay are found to be much less numerous than the number of decayed tritium atoms and they are metastable like Staebler-Wronski defects. These results provide new insight into the metastable defect creation and the role of hydrogen motion.

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References

  1. D. L. Staebler and C. R. Wronski. Appl. Phys. Lett. 31. 292 (1977).

    Article  CAS  Google Scholar 

  2. H. Fritzsche. Ann. Rev. Mater. Res. 31. 47 (2001).

    Article  CAS  Google Scholar 

  3. S. Zukotynski. F. Gaspari. N. Kherani. T. Kosteski. K. Law. W.T. Shmayda. C.M. Tan. J. of Non-Cryst. Solids 299-302, 476 (2002).

    Google Scholar 

  4. T. Kosteski. N. P. Kherani. P. Stradins. F. Gaspari. W. T. Shmayda. L. Sidhu and S. Zukotynski. IEE Proc.–Circuits Devices Syst. 150, 274 (2003).

    Article  Google Scholar 

  5. M. Stutzmann. W. B. Jackson. and C. C. Tsai. in Optical Effects in Amorphous Semiconductors—1984. AIP Conf. Proc. No. 120. edited by P. C. Taylor and S. G. Bishop (AIP. New York. 1984). p. 213 H.

  6. Branz. Solid State Commun. 105(6) (1998) 387.

    Article  CAS  Google Scholar 

  7. H. Branz. Phys. Rev. B 59 (1999) 5498.

    Article  CAS  Google Scholar 

  8. W. B. Jackson and N. B. Amer. Phys. Rev. B. 25. 5559. (1982).

    Article  CAS  Google Scholar 

  9. Yelon Fritzsche. Branz. J. Non-Cryst. Solids. 266. 473. (2000).

    Google Scholar 

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Acknowledgments

Work at the University of Utah was supported by NREL under subcontract #ADJ-2-30630-23 and NSF under grant #DMR-0073004.

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Authors and Affiliations

  1. Department of Physics., University of Utah., Salt Lake City, UT 84112, USA

    J. Whitaker, J. Viner & P. C. Taylor

  2. Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario, Canada, M5S 1A1

    S. Zukotynski & E. Johnson

  3. National Renewable Energy Laboratory, Golden, CO, 80401, USA

    P. Stradins

Authors
  1. J. Whitaker
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  2. J. Viner
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  3. S. Zukotynski
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  4. E. Johnson
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  5. P. C. Taylor
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  6. P. Stradins
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Whitaker, J., Viner, J., Zukotynski, S. et al. Tritium Induced Defects in Amorphous Silicon. MRS Online Proceedings Library 808, 89–94 (2003). https://doi.org/10.1557/PROC-808-A2.4

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  • DOI: https://doi.org/10.1557/PROC-808-A2.4

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