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Time-Resolved Switching Studies in a-Si:H and Related Films

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Abstract

Switching in a-Si:H and a-Si:HNx layers is investigated by pulse current transient and Auger scanning microspectroscopy measurements. Switching in a-Si:H with Ag and Cr contacts exhibits 2 different regimes depending on the voltage pulse polarity. With a positive top Ag contact, switching occurs in nanoseconds after a certain latency time, which depends on voltage exponentially. For a negative Ag contact, there is no latency time provided the voltage exceeds a certain critical value. This might be related to interface effects on contact properties or field-assisted metal diffusion. Scanning Auger element micromaps reveal metallic filaments in the switched films. They contain both Ag and Cr throughout the film thickness. Two phases of the filament formation are suggested – a precursor phase and a post-switching phase characterized by local heating and atomic diffusion. Soft and hard switching are observed in a-Si:HNx films simultaneously and their rates depend strongly on the contact material and applied voltage. Soft switching might be related to the charge trap** in this wide bandgap material.

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Authors and Affiliations

  1. National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, Colorado, 80401, USA

    P. Stradins, H. M. Branz, J. Hu, C. L. Perkins & Qi Wang

  2. Hewlett Packard Laboratories, 1501 Page Mill Rd., Palo Alto, CA, 94304, USA

    W. B. Jackson

Authors
  1. P. Stradins
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  2. W. B. Jackson
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  3. H. M. Branz
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  4. J. Hu
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  5. C. L. Perkins
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  6. Qi Wang
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Stradins, P., Jackson, W.B., Branz, H.M. et al. Time-Resolved Switching Studies in a-Si:H and Related Films. MRS Online Proceedings Library 762, 24 (2002). https://doi.org/10.1557/PROC-762-A2.4

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  • DOI: https://doi.org/10.1557/PROC-762-A2.4

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