Abstract
Silicide formation and growth are studied in three geometries: conventional planar thin films, lateral diffusion couples formed by depositing metal layers on Si islands, and device geometry couples formed by depositing metal on oxide-patterned Si substrates. The influence of impurities is studied by implanting arsenic and krypton into conventional and device geometry structures.
Here we present growth kinetics of CrSi2 where the presence of impurities has a strong influence. Si transport dominates in disilicide formation and leads to erosion of contacts around the periphery of oxide windows. Implantation of arsenic suppresses CrSi 2 formation; with krypton implantation, the growth kinetics shifts from linear to square-root in character. We attribute these results to impurity segregation at interfaces or grain boundaries.
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Zheng, L.R., Doolittle, L.R. & Mayer, J.W. Silicon Transport in Lateral Silicide Growth of CrSi2. MRS Online Proceedings Library 71, 287–295 (1986). https://doi.org/10.1557/PROC-71-287
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DOI: https://doi.org/10.1557/PROC-71-287