Abstract
The conductivity of a-Si:H multilayers consisting of alternating boron and phosphorus doped layers has been studied as a function of sub-layer thickness. The planar and perpendicular dark conductivity is compared with theoretical analysis of space-charge do** in these structures and this effect is found to dominate the transport as the sub-layer thickness is reduced below a critical value.
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The authors would like to thank T. Debies for the SIMS analysis.
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Steemers, H., Chen, I., Mort, J. et al. Planar and Perpendicular Conductivity of Do** Modulated Amorphous Silicon Multilayers. MRS Online Proceedings Library 70, 727–732 (1986). https://doi.org/10.1557/PROC-70-727
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DOI: https://doi.org/10.1557/PROC-70-727