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Erbium-Doped Barium Titanate Thin Film Waveguides for Integrated Optical Amplifiers

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Abstract

The factors affecting optical gain were studied for Er-doped BaTiO3 thin film waveguides. Er-doped BaTiO3 with dopant concentrations of 0.3–9 at.% was deposited by metal-organic chemical vapor deposition. The luminescence efficiency was maximized by optimizing the growth temperature and erbium concentration as well as by post-deposition annealing. Stimulated emission was studied using the pump-probe technique over the spectral range of 1, 520-1, 550 nm. A maximum differential gain of 3 dB/cm was measured at 1, 540 nm in an 8 mm long, 8 μm wide ridge waveguide.

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Authors and Affiliations

  1. Materials Science and Engineering Department, Northwestern University, 2225 N.Campus Drive, Evanston, IL, 60208, USA

    Andrew R. Teren & Bruce W. Wessels

  2. Physics and Astronomy Department, Northwestern University, Evanston, IL, 60208, USA

    Seong-Soo Kim

  3. Electrical and Computer Engineering Department, Northwestern University, 2145 Sheridan Rd., Evanston, IL, 60208, USA

    Seng-Tiong Ho & Bruce W. Wessels

Authors
  1. Andrew R. Teren
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  2. Seong-Soo Kim
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  3. Seng-Tiong Ho
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  4. Bruce W. Wessels
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Teren, A.R., Kim, SS., Ho, ST. et al. Erbium-Doped Barium Titanate Thin Film Waveguides for Integrated Optical Amplifiers. MRS Online Proceedings Library 688, 971 (2001). https://doi.org/10.1557/PROC-688-C9.7.1

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  • DOI: https://doi.org/10.1557/PROC-688-C9.7.1

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