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Novel Multilayer Process for CuInSe2 Thin Film Formation by Rapid Thermal Processing

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Abstract

CuInSe2 thin films have been synthesized from binary precursors by Rapid Thermal Processing (RTP) at a set-point temperature of 290°C for 70 s. With appropriate processing conditions no detrimental Cu2-xSe phase was detected in the CIS films. The novel binary precursor approach consisted of a bilayer structure of In-Se and Cu-Se compounds. This bilayer structure was deposited by migration enhanced physical vapor deposition at a low temperature (200°C) and the influence of deposition parameters on the precursor film composition was determined. The bilayer structure was then processed by RTP and characterized for constitution by X-ray diffraction and for composition by Wavelength Dispersive X-ray Spectroscopy.

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Acknowledgements

This work was supported by the DOE/NREL Thin Film PV Parternership Program under subcontract XAF-5-14142-10. The authors want to acknowledge Siemens Solar Industries for generously providing the Mo coated glass substrates used for this study and Lorein Rieth at the University of Florida for growing of the temperature calibration films.

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Authors and Affiliations

  1. Department of Chemical Engineering, University of Florida, Gainesville, FL, 32611, USA

    Chih-hung Chang, Billy Stanbery, Albert Davydov & Tim Anderson

  2. Department of Materials Science and Engineering, University of Florida, Gainesville, FL, 32611, USA

    Augusto Morrone

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  1. Chih-hung Chang
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  2. Billy Stanbery
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  3. Augusto Morrone
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  4. Albert Davydov
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  5. Tim Anderson
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Chang, Ch., Stanbery, B., Morrone, A. et al. Novel Multilayer Process for CuInSe2 Thin Film Formation by Rapid Thermal Processing. MRS Online Proceedings Library 485, 163–168 (1997). https://doi.org/10.1557/PROC-485-163

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  • DOI: https://doi.org/10.1557/PROC-485-163

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