Abstract
The interface between a Cu(In,Ga)Se2 (CIGS) and an underlying Mo layer was studied by X-ray diffraction and high resolution transmission electron microscopy. The CIGS layer was deposited onto Mo coated soda-lime glass using the “3-stage” process. A MoSe2 layer found to form at the CIGS/Mo interface during the 2nd stage of the “3-stage” process. The thickness of the MoSe2 layer depended on the substrate temperature used for CIGS film deposition as well as the Na content of the CIGS and/or Mo layers. For higher substrate temperatures, thicker MoSe2 layers were observed. The Na in the CIGS and/or Mo layer is felt to assist in the formation of MoSe2. Current-Voltage measurements of the heterojunction formed by the CIGS/Mo interface were ohmic even at low temperature. The role of the MoSe2 layer in high efficiency CIGS solar cells is discussed.
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Acknowledgement
This work was supported by NEDO as a part of the New Sunshine program conducted under the auspices of MITI. The authors would like to express their sincere appreciation to T. Kouzaki for his help with the TEM observations. The authors would also like to thank to Dr. P Fons of the Electrotechnical Laboratory (ETL) for his critical reading of the manuscript and Drs. 0. Yamazaki, M. Takao, T. Thoda and M. Kitagawa for their encouragement throughout this work.
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Nishiwaki, S., Kohara, N., Negami, T. et al. Characterization of Cu(In,Ga)Se2/Mo Interface in CIGS Solar Cells. MRS Online Proceedings Library 485, 139–144 (1997). https://doi.org/10.1557/PROC-485-139
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DOI: https://doi.org/10.1557/PROC-485-139