Abstract
The paper describes the influence of strain on the optical quality of GaN films grown by MBE on c-plane sapphire. The photoluminescence (PL) line width of the donor-bound exciton can be designed to be as narrow as 1.2 meV by actively utilizing hydrostatic and biaxial stress components. Unstrained p-type Mg-doped GaN films exhibit comparably narrow near band edge transitions. A sharp PL line at 3.261 eV in some of our films is identified as the donor bound exciton of the cubic phase. The formation of these cubic inclusions can be stimulated by a high III/V flux ratio at the growth temperature of T = 725°C. The PL spectrum of an InGaN multi quantum well structure is significantly broadened compared with the spectra of single quantum well structures. Combination of PL and TEM indicates that this effect relates to a progressive increase of the quantum well widths and their spacing along the growth direction. It is argued that strain affects the growth rate and the incorporation of Indium into the quantum well structures.
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Acknowledgement
We would like to gratefully acknowledge the supply of the MOCVD-grown quantum well structures by Nichia Chemical Industries, APA Optics, and Hewlett Packard Company. We acknowledge discussions with Zuzanna Liliental-Weber. This work was supported by the Office of Computational and Technology Research, Advanced Energy Projects and the Laboratory Technology Research Program (ERLTR) of the U.S. Department of Energy under Contract No. DE-AC03-76SF00098.
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Krüger, J., Kisielowski, C., Klockenbrink, R. et al. Photoluminescence of Strain-Engineered MBE-Grown GaN and InGaN Quantum Well Structures. MRS Online Proceedings Library 468, 299–304 (1997). https://doi.org/10.1557/PROC-468-299
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DOI: https://doi.org/10.1557/PROC-468-299