Abstract
We have observed a pronounced change in the shape of subgap absorption spectrum 6h(h7p) of a-Si:H due to photodegradation at T=4.2K, in contrast to light exposure at T=300K. During the 4.2K exposure, 6h(h7p) at 1.1 ≤ (h7p) ≤ 1.6eV increases with time as (6h(t)-6h(0)) ∝ t0.3. However, for h7p ≤ 1eV the absorption 6h(h7p) stays constant or decreases with exposure at 4.2K. Subsequent anneal causes the subgap absorption at the higher photon energies to decrease monotonically while a (h7p ≤ 1.1eV) increases first and goes through a maximum at T≈350K. This unexpected increase in 6h(h7p) during annealing occurs at the anneal temperatures where the degraded mobility-lifetime product recovers. We suggest that the nonmonotonic recovery of a (h7p ≤ 1.1eV) during annealing is associated with preferential anneal of deeper defects or with structural relaxations around the defects during anneal causing a shift in their energy levels.
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Stradins, P., Fritzsche, H. Change in The Spectral Shape of the Subgap Absorption in a-SI:H by Photodegradation at 4.2K and its Relation to the Mobility-Lifetime Product. MRS Online Proceedings Library 467, 85–90 (1997). https://doi.org/10.1557/PROC-467-85
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DOI: https://doi.org/10.1557/PROC-467-85