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Space Charge Memory Effect in a-Si:H at low Temperatures

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Abstract

Space charges build up near one or both electrodes of a photoconductor unless the thermoionic current balances the photocurrent. Space charges built up also when a voltage U is applied at low T to a semiconductor containing a non-equilibrium distribution of carriers. The presence of a space charge is observed as a relaxation-current transient when the sample is illuminated at zero bias. If one type of carrier is immobile the steady state photocurrent becomes zero.

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Acknowledgement

This work is supported by grant NSF DMR 9408670 and by the low temperature facility of MRSEC of the University of Chicago supported by NSF at the University of Chicago.

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Author notes

  1. S. Heck

    Present address: National Renewable Energy Laboratories, Golden, CO, USA

  2. P. Stradins

    Present address: Electrotechnical Laboratory, Tsukuba, Ibaraki, 305, Japan

Authors and Affiliations

  1. James Franck Institute, University of Chicago, Chicago, IL, USA

    S. Heck & P. Stradins

  2. Tucson, AZ, USA

    H. Fritzsche

Authors
  1. S. Heck
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  2. P. Stradins
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  3. H. Fritzsche
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Heck, S., Stradins, P. & Fritzsche, H. Space Charge Memory Effect in a-Si:H at low Temperatures. MRS Online Proceedings Library 467, 251–256 (1997). https://doi.org/10.1557/PROC-467-251

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  • DOI: https://doi.org/10.1557/PROC-467-251

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