Abstract
The development of cracks in a PZT thin film prepared by pulsed laser deposition on an unheated Pt-coated silicon substrate, and subsequently crystallized by post-deposition annealing, was investigated as a function of film thickness. As deposited, the film was amorphous. The film was heated at 600 °C to produce predominantly ferroelectric crystalline PZT. Spacing, width and morphology of cracks in the film followed a regular progression in which crack area decreased with decreasing film thickness. Data on area shrinkage, as deduced from crack area, were fit equally well as either a linear or a parabolic function of film thickness. It is suggested that crystallization-induced stresses rather than thermal-gradient related stresses, were dominant in the formation of the cracks, and that these stresses were modified by interaction with the substrate.
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Lee, H.M., Chuang, T.J., Chiang, C.K. et al. Crack Development in Pulsed Laser-Deposited PZT Thin Films. MRS Online Proceedings Library 285, 409–413 (1992). https://doi.org/10.1557/PROC-285-409
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DOI: https://doi.org/10.1557/PROC-285-409