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Fabrication of P-Type Cuinse2 Thin Film by MBD Using ECR Excited Nitrogen Ion Source

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Abstract

Polycrystalline CuInSe2 thin films were prepared by coevaporation of the elements under the irradiation of nitrogenions excited by ECR plasma. Nitrogen atoms were doped uniformly in the obtained CuInSe2 films according to the SIMS analysis. The films showed p-type conduction even in the slightly In-rich region where the coevaporation films without the irradiation of nitrogen ions showed n-type conduction. These results show that p-type CuInSe2 thin films even in the slightly In-rich region can be fabricated by the irradiation of ECR excited nitrogen ions during its ternary coevaporation process.

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Acknowledgement

A part of this work was supported by New Energy and Industri@l Technology Development Organization as a part of the program for Industrial Science and Technology under the Sunshine Project. We would like to Dr. M. Ikeda and Dr. S. Kohiki for the useful suggestions and discussions, and the staff of Ion Engineering Cent er Corporation for their helps in this work. We also thank Dr. Nitta and Dr. Kanai for their encouragements throughout this work.

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Authors and Affiliations

  1. Central Research Laboratories, Matsushita Electric Ind. Co., Ltd., Moriguchi, Osaka, 570, Japan

    M. Nishitani, T. Negami, M. Terauchi, T. Wada & T. Hirao

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  1. M. Nishitani
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  2. T. Negami
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  3. M. Terauchi
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  4. T. Wada
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  5. T. Hirao
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Nishitani, M., Negami, T., Terauchi, M. et al. Fabrication of P-Type Cuinse2 Thin Film by MBD Using ECR Excited Nitrogen Ion Source. MRS Online Proceedings Library 268, 145–149 (1992). https://doi.org/10.1557/PROC-268-145

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  • DOI: https://doi.org/10.1557/PROC-268-145

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